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<p>In this work, the effect of 8&#xa0;MeV electron irradiation on radiative recombination processes in Cu<sub>2</sub>SnS<sub>3</sub> doped with 4% indium (CTS:In) was investigated. Photoluminescence (PL) spectra of the CTS:In samples in the temperature range from 7 to 350&#xa0;K before and after irradiation with 8&#xa0;MeV electrons were studied. Three main peaks were found at the temperature of 7&#xa0;K: at 0.86&#xa0;eV (A peak), at 1.05&#xa0;eV (B peak), and at 1.13&#xa0;eV (C peak) in the PL spectra. It was revealed that the B peak can be associated with Cu<sub>2</sub>S particles. The main contribution to the C peak before irradiation is made by free-to-bound (FB) recombination in the CTS:In. A significant decrease in the intensity of the A and C peaks after irradiation is associated with the destruction of radiative defect centers under the influence of electron irradiation. This indicates the possible rapid degradation of thermoelectric performance in CTS:In-based devices.</p>

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Effect of 8 MeV electron irradiation on photoluminescence spectra of indium-doped Cu2SnS3 crystals

  • 期刊论文

  • 发表日期：

    2026年2月18日

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  • A. D. Lobanov,
  • M. A. Sulimov,
  • D. I. Radzivonchik,
  • S. Nakamura,
  • M. N. Sarychev,
  • V. Yu. Ivanov,
  • T. V. Kuznetsova

摘要

In this work, the effect of 8 MeV electron irradiation on radiative recombination processes in Cu2SnS3 doped with 4% indium (CTS:In) was investigated. Photoluminescence (PL) spectra of the CTS:In samples in the temperature range from 7 to 350 K before and after irradiation with 8 MeV electrons were studied. Three main peaks were found at the temperature of 7 K: at 0.86 eV (A peak), at 1.05 eV (B peak), and at 1.13 eV (C peak) in the PL spectra. It was revealed that the B peak can be associated with Cu2S particles. The main contribution to the C peak before irradiation is made by free-to-bound (FB) recombination in the CTS:In. A significant decrease in the intensity of the A and C peaks after irradiation is associated with the destruction of radiative defect centers under the influence of electron irradiation. This indicates the possible rapid degradation of thermoelectric performance in CTS:In-based devices.