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<p>Zinc oxide (ZnO) thin films were deposited on Si(100) substrates using aerosol-assisted chemical vapor deposition (AACVD) to investigate how substrate temperature influences their structural, optical, and ultraviolet (UV) photodetection properties. The films were grown at substrate temperatures ranging from 200 to 350&#xa0;°C and thoroughly characterized through X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and UV–visible spectroscopy. X-ray diffraction confirmed the formation of polycrystalline ZnO with a hexagonal wurtzite structure, showing temperature-dependent variations in crystallite size, lattice strain, and preferred orientation. Morphological analysis indicated a clear transition from fine, loosely packed structures at lower temperatures to denser, columnar morphologies at higher temperatures. Optical measurements revealed strong UV absorption in the 330–400&#xa0;nm range, with increased absorbance in films with nano-textured surfaces. Metal–semiconductor–metal (MSM) UV photodetectors were fabricated using these ZnO thin films as the active layer. The devices responded distinctly under 395&#xa0;nm UV illumination, with the ZnO film grown at 350&#xa0;°C achieving a maximum responsivity of 3.42 A/W at 5&#xa0;V bias, along with rapid response and recovery times of 0.93&#xa0;s and 0.16&#xa0;s, respectively. These results demonstrate that substrate temperature significantly influences the structural and optoelectronic properties of AACVD-grown ZnO thin films and markedly affects their UV photodetection performance, confirming AACVD as a scalable approach for producing ZnO-based UV photodetectors.</p>

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UV photodetection performances of ZnO thin film grown by the aerosol-assisted CVD method

  • 期刊论文

  • 发表日期：

    2026年2月21日

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  • M. A. Mustajab,
  • P. Arifin,
  • F. A. Permatasari,
  • D. A. Hapidin,
  • P. Fitriani,
  • F. Iskandar

摘要

Zinc oxide (ZnO) thin films were deposited on Si(100) substrates using aerosol-assisted chemical vapor deposition (AACVD) to investigate how substrate temperature influences their structural, optical, and ultraviolet (UV) photodetection properties. The films were grown at substrate temperatures ranging from 200 to 350 °C and thoroughly characterized through X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and UV–visible spectroscopy. X-ray diffraction confirmed the formation of polycrystalline ZnO with a hexagonal wurtzite structure, showing temperature-dependent variations in crystallite size, lattice strain, and preferred orientation. Morphological analysis indicated a clear transition from fine, loosely packed structures at lower temperatures to denser, columnar morphologies at higher temperatures. Optical measurements revealed strong UV absorption in the 330–400 nm range, with increased absorbance in films with nano-textured surfaces. Metal–semiconductor–metal (MSM) UV photodetectors were fabricated using these ZnO thin films as the active layer. The devices responded distinctly under 395 nm UV illumination, with the ZnO film grown at 350 °C achieving a maximum responsivity of 3.42 A/W at 5 V bias, along with rapid response and recovery times of 0.93 s and 0.16 s, respectively. These results demonstrate that substrate temperature significantly influences the structural and optoelectronic properties of AACVD-grown ZnO thin films and markedly affects their UV photodetection performance, confirming AACVD as a scalable approach for producing ZnO-based UV photodetectors.