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<p>In this study, Nd-doped BiFeO<sub>3</sub> (Bi<sub>1-x</sub>Nd<sub>x</sub>FeO<sub>3</sub>,<i>x</i> = 0–0.04) thin films were prepared via the sol–gel method, and the effects of doping on their structure and properties were systematically investigated. XRD and Raman spectroscopy confirmed that the doped films retained a typical perovskite structure. SEM and XPS characterization revealed that Nd doping reduced the concentration of Fe<sup>2</sup>⁺ ions and oxygen vacancies, thereby optimizing leakage current characteristics. The optimal electrical performance was achieved at <i>x</i> = 0.03, exhibiting a remnant polarization (2Pr ) of 140.22 μC/cm<sup>2</sup> with a corresponding coercive field of 1200 kV/cm, while the leakage current density reached a minimum of 6.51 × 10⁻⁶ A/cm<sup>2</sup> under an applied field of 100 kV/cm. UV–Vis spectroscopy indicated that Nd doping increased the bandgap, suppressing intrinsic carrier concentration, which synergistically contributed to leakage reduction alongside the decreased oxygen vacancies. Furthermore, the study demonstrated that Nd doping mitigated the aging effect in BFO thin films, enhancing their potential for applications in FeRAM and fatigue-resistant piezoelectric devices.</p>

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Effects of Nd doping on the structure and properties of BiFeO₃ thin films

  • 期刊论文

  • 发表日期：

    2026年2月24日

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  • Lingxu Wang,
  • Haixia Zhang,
  • Qingyin Pei,
  • Yuan Liu,
  • Zhenfeng Jing,
  • Shuhui Sun,
  • Sen Zhang,
  • Xingfu Li,
  • Fengqing Zhang

摘要

In this study, Nd-doped BiFeO3 (Bi1-xNdxFeO3,x = 0–0.04) thin films were prepared via the sol–gel method, and the effects of doping on their structure and properties were systematically investigated. XRD and Raman spectroscopy confirmed that the doped films retained a typical perovskite structure. SEM and XPS characterization revealed that Nd doping reduced the concentration of Fe2⁺ ions and oxygen vacancies, thereby optimizing leakage current characteristics. The optimal electrical performance was achieved at x = 0.03, exhibiting a remnant polarization (2Pr ) of 140.22 μC/cm2 with a corresponding coercive field of 1200 kV/cm, while the leakage current density reached a minimum of 6.51 × 10⁻⁶ A/cm2 under an applied field of 100 kV/cm. UV–Vis spectroscopy indicated that Nd doping increased the bandgap, suppressing intrinsic carrier concentration, which synergistically contributed to leakage reduction alongside the decreased oxygen vacancies. Furthermore, the study demonstrated that Nd doping mitigated the aging effect in BFO thin films, enhancing their potential for applications in FeRAM and fatigue-resistant piezoelectric devices.