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<p>Using pulsed laser deposition (PLD) technology, a p–n junction UV photodetector was fabricated on a porous silicon substrate. Thin films with different ratios, 40% indium oxide (In<sub>2</sub>O<sub>3</sub>) and 60% tungsten oxide (WO<sub>3</sub>) and vice versa, were successfully created using modest local facilities. After deposition, the crystal structure and general characteristics were greatly improved by a thermal annealing procedure carried out for three hours at 400&#xa0;°C. The material’s polycrystalline nature was clearly shown by X-ray diffraction (XRD) analysis, which showed distinctive peaks linked to both the In<sub>2</sub>O<sub>3</sub> and WO<sub>3</sub> phases. Accurate information about the surface roughness, crystal size, and outer surface was obtained using high-resolution scanning electron microscopy (FE-SEM). In order to thoroughly investigate optical transmittance and optical power, ultraviolet–visible (UV–Vis) spectroscopy was utilized. Comprehensive cross-sectional and final analyses were also carried out. The findings unequivocally show that the In<sub>2</sub>O<sub>3</sub> and WO<sub>3</sub> films have exceptional optical and structural characteristics that guarantee their optical stability and sensitivity.</p>

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Development of In2O3–WO3/porous silicon PN junctions by PLD for enhanced photodetector performance

  • 期刊论文

  • 发表日期：

    2026年3月3日

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  • Ahmed Yaseen,
  • Ziad T. Khodair,
  • Nadia Mohammed Jassim

摘要

Using pulsed laser deposition (PLD) technology, a p–n junction UV photodetector was fabricated on a porous silicon substrate. Thin films with different ratios, 40% indium oxide (In2O3) and 60% tungsten oxide (WO3) and vice versa, were successfully created using modest local facilities. After deposition, the crystal structure and general characteristics were greatly improved by a thermal annealing procedure carried out for three hours at 400 °C. The material’s polycrystalline nature was clearly shown by X-ray diffraction (XRD) analysis, which showed distinctive peaks linked to both the In2O3 and WO3 phases. Accurate information about the surface roughness, crystal size, and outer surface was obtained using high-resolution scanning electron microscopy (FE-SEM). In order to thoroughly investigate optical transmittance and optical power, ultraviolet–visible (UV–Vis) spectroscopy was utilized. Comprehensive cross-sectional and final analyses were also carried out. The findings unequivocally show that the In2O3 and WO3 films have exceptional optical and structural characteristics that guarantee their optical stability and sensitivity.