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<p>Hafnium–zirconium oxide (HZO) ferroelectric films are emerging as transformative materials for high-performance optoelectronics due to their wide bandgap and exceptional surface quality. Here, Zr-doped HfO<sub>2</sub> ferroelectric (HZO) films were prepared using radio-frequency magnetron sputtering. The surface structure, composition, optical&#xa0;and electrical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy&#xa0;and atomic force microscopy (AFM). The properties of HZO films were controlled by adjusting process parameters, such as annealing temperature, annealing time, deposition time&#xa0;and power. The optimized films exhibit a dense&#xa0;anddefect-free microstructure, it also delivered&#xa0;pure composition, an ultrawide bandgap of approximately 5.3&#xa0;eV, and atomically smooth surfaces (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({R}_{q}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>R</mi> <mi>q</mi> </msub> </math></EquationSource> </InlineEquation> = 0.174&#xa0;nm, <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({R}_{a}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>R</mi> <mi>a</mi> </msub> </math></EquationSource> </InlineEquation> = 0.138&#xa0;nm) following rapid thermal annealing at 550&#xa0;°C for 30&#xa0;s in a nitrogen atmosphere. These results establish a scalable&#xa0;andindustry-compatible route to produce&#xa0;high-quality HZO films, paving the way for advanced solar-blind ultraviolet photodetectors and next-generation ferroelectric devices.</p>

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The effect of magnetron sputtering process on the photoelectric properties of Zr-doped hafnium oxide thin films

  • 期刊论文

  • 发表日期：

    2026年2月8日

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  • Zekui Zhang,
  • Dan Zheng,
  • Zhaoguang Huang,
  • Kun Chen,
  • Baoyuan Wang

摘要

Hafnium–zirconium oxide (HZO) ferroelectric films are emerging as transformative materials for high-performance optoelectronics due to their wide bandgap and exceptional surface quality. Here, Zr-doped HfO2 ferroelectric (HZO) films were prepared using radio-frequency magnetron sputtering. The surface structure, composition, optical and electrical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and atomic force microscopy (AFM). The properties of HZO films were controlled by adjusting process parameters, such as annealing temperature, annealing time, deposition time and power. The optimized films exhibit a dense anddefect-free microstructure, it also delivered pure composition, an ultrawide bandgap of approximately 5.3 eV, and atomically smooth surfaces ( \({R}_{q}\) R q = 0.174 nm, \({R}_{a}\) R a = 0.138 nm) following rapid thermal annealing at 550 °C for 30 s in a nitrogen atmosphere. These results establish a scalable andindustry-compatible route to produce high-quality HZO films, paving the way for advanced solar-blind ultraviolet photodetectors and next-generation ferroelectric devices.