Scholarlink

<p>As emerging sectors like new energy and flexible electronics increasingly require high-performance flexible energy storage devices, the development of lead-free inorganic dielectric films that exhibit superior energy storage capabilities and mechanical flexibility has emerged as a key area of research. In the present study, lead-free 0.94 BaZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>–0.06 Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub> (BZT–NBT) dielectric energy storage films were successfully prepared on flexible fluorophlogopite (Mica) substrates using a sol–gel. A systematic examination was conducted on how film thickness (80, 110, 150, and 200&#xa0;nm) influences microstructure, electrical characteristics, and energy storage capabilities. Among all the specimens, the 110&#xa0;nm-thick film exhibits the best overall performance: it has a high breakdown strength (<i>E</i><sub>b</sub>) of 2157&#xa0;kV&#xa0;cm<sup>−1</sup>, a maximum recoverable energy storage density (<i>W</i><sub>rec</sub>) of 8.38&#xa0;J&#xa0;cm<sup>−3</sup>, and an energy storage efficiency (<i>η</i>) of 96.61%. Moreover, this film shows remarkable stability under harsh conditions: thermal stability (25–200&#xa0;°C) with variation rates of 5.15% for <i>W</i><sub>rec</sub> and 6.08% for <i>η</i>, fatigue resistance (10<sup>7</sup> cycles) with variation rates of 2.11% for <i>W</i><sub>rec</sub> and 2.24% for <i>η</i>, and bending durability (10<sup>4</sup> cycles) with variation rates of 4.84% for <i>W</i><sub>rec</sub> and 5.70% for <i>η.</i></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Influence of thickness on dielectric energy storage of sol–gel prepared flexible BZT–NBT films on mica

  • 期刊论文

  • 发表日期：

    2026年1月20日

查看全文
  • Xue Zhang,
  • Chao Yin,
  • Haixin Ma,
  • Xinyang Zhou,
  • Guangxin Wang,
  • Jianzeng Guo,
  • Xu Tong,
  • Changhai Zhang

摘要

As emerging sectors like new energy and flexible electronics increasingly require high-performance flexible energy storage devices, the development of lead-free inorganic dielectric films that exhibit superior energy storage capabilities and mechanical flexibility has emerged as a key area of research. In the present study, lead-free 0.94 BaZr0.2Ti0.8O3–0.06 Na0.5Bi0.5TiO3 (BZT–NBT) dielectric energy storage films were successfully prepared on flexible fluorophlogopite (Mica) substrates using a sol–gel. A systematic examination was conducted on how film thickness (80, 110, 150, and 200 nm) influences microstructure, electrical characteristics, and energy storage capabilities. Among all the specimens, the 110 nm-thick film exhibits the best overall performance: it has a high breakdown strength (Eb) of 2157 kV cm−1, a maximum recoverable energy storage density (Wrec) of 8.38 J cm−3, and an energy storage efficiency (η) of 96.61%. Moreover, this film shows remarkable stability under harsh conditions: thermal stability (25–200 °C) with variation rates of 5.15% for Wrec and 6.08% for η, fatigue resistance (107 cycles) with variation rates of 2.11% for Wrec and 2.24% for η, and bending durability (104 cycles) with variation rates of 4.84% for Wrec and 5.70% for η.