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<p>Rare earth elements possess distinctive 4f electronic structures and unique physicochemical properties, which have led to their extensive application across various fields. This paper systematically investigates the effect of varying CeO<sub>2</sub> doping levels (ranging from 1.3 wt% to 1.7 wt%) on the electrical properties of RuO<sub>2</sub>-CuO resistance paste. The experiment found that with the increase of CeO<sub>2</sub> content, the temperature coefficient of resistance (TCR) of the paste decreased from 2211 (ppm/℃) to 2177 (ppm/℃), and the square resistance showed a phenomenon of first increasing and then decreasing, specifically varying between 103 (Ω/□) and 112 (Ω/□). By analyzing its microstructure and elemental state through SEM and XPS, the phenomenon that the square resistance first increases and then decreases with the doping amount, as well as the reasons for the decrease in TCR and the linear relationship was analyzed from the perspective of the conductivity mechanism. The research results provide new theoretical support for the design and preparation of high-performance resistive slits.</p>

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Effect of CeO2 doping on electrical properties and microstructural of RuO2–CuO composite resistor pastes

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • Tao Yang,
  • Guoyou Gan,
  • Xianglei Yu,
  • Hu Sun,
  • Junpeng Li,
  • Xianjie Tang,
  • Ruixi Wan,
  • Donghui Wang,
  • Zhuo Qian

摘要

Rare earth elements possess distinctive 4f electronic structures and unique physicochemical properties, which have led to their extensive application across various fields. This paper systematically investigates the effect of varying CeO2 doping levels (ranging from 1.3 wt% to 1.7 wt%) on the electrical properties of RuO2-CuO resistance paste. The experiment found that with the increase of CeO2 content, the temperature coefficient of resistance (TCR) of the paste decreased from 2211 (ppm/℃) to 2177 (ppm/℃), and the square resistance showed a phenomenon of first increasing and then decreasing, specifically varying between 103 (Ω/□) and 112 (Ω/□). By analyzing its microstructure and elemental state through SEM and XPS, the phenomenon that the square resistance first increases and then decreases with the doping amount, as well as the reasons for the decrease in TCR and the linear relationship was analyzed from the perspective of the conductivity mechanism. The research results provide new theoretical support for the design and preparation of high-performance resistive slits.