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<p>This work investigates the optimization of the passivated contact stack in n-type TOPCon solar cells by employing a triple-layer poly-Si/oxide architecture deposited via PECVD. Beyond providing conventional passivation, the incorporated ultra-thin oxide interlayers effectively suppress phosphorus in-diffusion due to the significantly lower solubility and diffusivity of P in SiOx compared with crystalline Si. Simultaneously, the oxide acts as an efficient etch-stop barrier against Ag penetration during high-temperature metallization Glatthaar (Fundamental microscopic studies on the etching behavior of silver pastes on poly-Si/SiOx passivating contacts. Solar Energy Materials and Solar Cells. 261: 112516. 10.1016/j.solmat.2023.112516, 2023). These two effects enable substantial thinning of the poly-Si layer, thereby reducing parasitic absorption while preserving robust passivation and stable metallization behavior. A TOPCon device with an ultra-thin 65-nm triple-layer poly-Si stack was fabricated, yielding an increase of approximately 0.2&#xa0;mA/cm<sup>2</sup> in J<sub>sc</sub>. After pairing with a tailored Ag paste, the final device efficiency improved by &gt; 0.2% (absolute) relative to a conventional single-layer poly-Si TOPCon structure. These results demonstrate the viability of multi-oxide-layer contact structures for industrial TOPCon applications.</p>

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Triple-layer tunneling oxide strategy enabling ultra-thin poly-Si passivating contacts for high-efficiency TOPCon solar cells

  • 期刊论文

  • 发表日期：

    2026年2月2日

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  • Pu Tian,
  • Hong Bo,
  • Zhang Jian’an,
  • Peng Yun,
  • Chen Qiang,
  • Zhuang Da’ming

摘要

This work investigates the optimization of the passivated contact stack in n-type TOPCon solar cells by employing a triple-layer poly-Si/oxide architecture deposited via PECVD. Beyond providing conventional passivation, the incorporated ultra-thin oxide interlayers effectively suppress phosphorus in-diffusion due to the significantly lower solubility and diffusivity of P in SiOx compared with crystalline Si. Simultaneously, the oxide acts as an efficient etch-stop barrier against Ag penetration during high-temperature metallization Glatthaar (Fundamental microscopic studies on the etching behavior of silver pastes on poly-Si/SiOx passivating contacts. Solar Energy Materials and Solar Cells. 261: 112516. 10.1016/j.solmat.2023.112516, 2023). These two effects enable substantial thinning of the poly-Si layer, thereby reducing parasitic absorption while preserving robust passivation and stable metallization behavior. A TOPCon device with an ultra-thin 65-nm triple-layer poly-Si stack was fabricated, yielding an increase of approximately 0.2 mA/cm2 in Jsc. After pairing with a tailored Ag paste, the final device efficiency improved by > 0.2% (absolute) relative to a conventional single-layer poly-Si TOPCon structure. These results demonstrate the viability of multi-oxide-layer contact structures for industrial TOPCon applications.