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<p>Precise control of oxygen vacancies is critical for optimizing the electrical performance and stability of amorphous oxide thin-film transistors (AOS TFTs). Amorphous Ga–Zn–Sn–O (a-GZTO) is a promising material in this regard, with Ga incorporation expected to modulate oxygen vacancy concentration and improve device reliability. This study systematically investigates the impact of Ga content on the electrical properties and thermal stability of a-GZTO TFTs. The characteristics of a-GZTO thin-film transistors (TFTs) were investigated by varying the gallium (Ga) concentration to 0 wt%, 1 wt%, and 2 wt%, enabling a systematic comparison of their electrical performance. A-GZTO TFTs were fabricated using radio frequency (RF) magnetron sputtering at room temperature. As the Ga ratio increased, the device’s threshold voltage (V<sub>th</sub>) shifted upward from 4.84 to 9.38&#xa0;V, while the mobility decreased from 22.9 to 17.7 cm<sup>2</sup>/V·s. Additionally, UV–visible spectroscopy revealed that higher Ga content enhanced transmittance in the ultraviolet region, indicating improved optical properties. To further examine these electrical characteristics, X-ray photoelectron spectroscopy (XPS) was employed, which confirmed that increased Ga content resulted in a reduction of oxygen vacancies. Transmission line measurement (TLM) analysis also validated a decrease in carrier concentration with higher Ga ratios, supporting the observed decline in mobility. Device stability was further assessed under temperature stress (TS), and based on the TS results, activation energy (<i>E</i><sub><i>a</i></sub>) and density of states (DOS) were extracted. These findings suggest that increasing Ga doping enhances thermal stability and optical transparency by reducing oxygen vacancies, although it adversely affects certain electrical properties due to decreased carrier concentration.</p>

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Effect of gallium ratio on the electrical characteristics and stability of GZTO thin-film transistors: a trap state analysis

  • 期刊论文

  • 发表日期：

    2026年1月9日

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  • Sang Ji Kim,
  • Sang Yeol Lee

摘要

Precise control of oxygen vacancies is critical for optimizing the electrical performance and stability of amorphous oxide thin-film transistors (AOS TFTs). Amorphous Ga–Zn–Sn–O (a-GZTO) is a promising material in this regard, with Ga incorporation expected to modulate oxygen vacancy concentration and improve device reliability. This study systematically investigates the impact of Ga content on the electrical properties and thermal stability of a-GZTO TFTs. The characteristics of a-GZTO thin-film transistors (TFTs) were investigated by varying the gallium (Ga) concentration to 0 wt%, 1 wt%, and 2 wt%, enabling a systematic comparison of their electrical performance. A-GZTO TFTs were fabricated using radio frequency (RF) magnetron sputtering at room temperature. As the Ga ratio increased, the device’s threshold voltage (Vth) shifted upward from 4.84 to 9.38 V, while the mobility decreased from 22.9 to 17.7 cm2/V·s. Additionally, UV–visible spectroscopy revealed that higher Ga content enhanced transmittance in the ultraviolet region, indicating improved optical properties. To further examine these electrical characteristics, X-ray photoelectron spectroscopy (XPS) was employed, which confirmed that increased Ga content resulted in a reduction of oxygen vacancies. Transmission line measurement (TLM) analysis also validated a decrease in carrier concentration with higher Ga ratios, supporting the observed decline in mobility. Device stability was further assessed under temperature stress (TS), and based on the TS results, activation energy (Ea) and density of states (DOS) were extracted. These findings suggest that increasing Ga doping enhances thermal stability and optical transparency by reducing oxygen vacancies, although it adversely affects certain electrical properties due to decreased carrier concentration.