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<p>Recently, Ni<sup>2+</sup> doped inorganic luminescent materials have received extensive attention owing to their ability to achieve broadband near infrared II region (NIR-II) emission. However, reported materials still suffer from the disadvantages such as poor luminous thermal stability. Herein, a range of broadband NIR-II phosphors Mg<sub>2</sub>LaTaO<sub>6</sub>: Ni<sup>2+</sup> (MLT: Ni<sup>2+</sup>) were synthesized successfully. The titled phosphors emit NIR-II light (1000–1700&#xa0;nm) under 407&#xa0;nm excitation, the full width at half maximum is as wide as 207&#xa0;nm. Compared with existing NIR-II phosphors, MLT: Ni<sup>2+</sup> phosphors present satisfactory thermal stability of luminescence (the integral intensity at 423&#xa0;K is 81.07% of that at 273&#xa0;K). Due to the weak crystal field and high structure stiffness, the materials exhibit high photoluminescence quantum efficiency (the optimal value is 45.3%). A pc-LED prepared by combining MLT: Ni<sup>2+</sup> phosphor with near ultraviolet LED chip with a drive current of 100&#xa0;mA and an output power of 2.36&#xa0;mW. This work presents important reference significance for the exploring of Ni<sup>2+</sup> doped NIR-II emitting phosphors with excellent luminous thermal stability.</p>

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Broadband NIR-II emitting phosphors of Mg2LaTaO6: Ni2+ with satisfactory luminous thermal stability

  • 期刊论文

  • 发表日期：

    2025年12月29日

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  • Jie Li,
  • Fugen Wu,
  • Yifu Zhuo,
  • Le Huang,
  • Qi Zhang,
  • Yun Teng,
  • Daoyun Zhu,
  • Xiaozhu Xie,
  • Huafeng Dong,
  • Zhongfei Mu

摘要

Recently, Ni2+ doped inorganic luminescent materials have received extensive attention owing to their ability to achieve broadband near infrared II region (NIR-II) emission. However, reported materials still suffer from the disadvantages such as poor luminous thermal stability. Herein, a range of broadband NIR-II phosphors Mg2LaTaO6: Ni2+ (MLT: Ni2+) were synthesized successfully. The titled phosphors emit NIR-II light (1000–1700 nm) under 407 nm excitation, the full width at half maximum is as wide as 207 nm. Compared with existing NIR-II phosphors, MLT: Ni2+ phosphors present satisfactory thermal stability of luminescence (the integral intensity at 423 K is 81.07% of that at 273 K). Due to the weak crystal field and high structure stiffness, the materials exhibit high photoluminescence quantum efficiency (the optimal value is 45.3%). A pc-LED prepared by combining MLT: Ni2+ phosphor with near ultraviolet LED chip with a drive current of 100 mA and an output power of 2.36 mW. This work presents important reference significance for the exploring of Ni2+ doped NIR-II emitting phosphors with excellent luminous thermal stability.