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<p>Construction of ferroelectric heterostructures is a powerful and widely used strategy for boosting the performance of optoelectronic devices. Here, we demonstrate an approach to tune the photoelectric properties of Platinum sulfide (PtS<sub>2</sub>) by using a ferroelectric 0.72PbMg<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>–0.28PbTiO<sub>3</sub>(PMN–PT) as substrate. It is found that both the drain current and photocurrent of the PtS<sub>2</sub> photodetector are modulated by gate voltages (<i>V</i><sub><i>g</i></sub>), which causes the electrostriction and polarization of the PMN–PT substrate, showing a high current rectification ratio ~ 10<sup>3</sup> and with responsivity increased 10<sup>3</sup> times up to 6.3 × 10<sup>3</sup> A/W. Additionally, a high photogain of 5 × 10<sup>5</sup> is obtained at <i>V</i><sub><i>g</i></sub> = 15&#xa0;V. Our results provide an effective method for manipulating electrical properties and optimizing the performance of two-dimensional layered (2D) materials-based optoelectronic devices.</p>

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In situ tuned photoelectric properties of PtS2 transistor

  • 期刊论文

  • 发表日期：

    2025年12月29日

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  • Kezhi Li,
  • Yana Cui,
  • Weike Wang

摘要

Construction of ferroelectric heterostructures is a powerful and widely used strategy for boosting the performance of optoelectronic devices. Here, we demonstrate an approach to tune the photoelectric properties of Platinum sulfide (PtS2) by using a ferroelectric 0.72PbMg1/3Nb2/3O3–0.28PbTiO3(PMN–PT) as substrate. It is found that both the drain current and photocurrent of the PtS2 photodetector are modulated by gate voltages (Vg), which causes the electrostriction and polarization of the PMN–PT substrate, showing a high current rectification ratio ~ 103 and with responsivity increased 103 times up to 6.3 × 103 A/W. Additionally, a high photogain of 5 × 105 is obtained at Vg = 15 V. Our results provide an effective method for manipulating electrical properties and optimizing the performance of two-dimensional layered (2D) materials-based optoelectronic devices.