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<p>Zirconium nitride (ZrN) thin films were deposited on SiO<sub>2</sub>/Si substrates via direct current reactive magnetron sputtering (DCMS), with the reactive gas flow rate ratio, denoted as <i>f</i> (the ratio of N<sub>2</sub> to the total flow of N<sub>2</sub> and Ar), adjusted from 10 to 80%. The microstructure and electrical properties of the ZrN<sub>x</sub> thin films were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and a physical property measurement system. As the flow rate ratio of the reactive gas increased, the microstructure evolved from cubic ZrN to poorly crystallized orthorhombic Zr<sub>3</sub>N<sub>4</sub>. The resistance–temperature (RT) characteristics measured in the 1.9&#xa0;K to 400&#xa0;K range revealed a metal-to-semiconductor transition when <i>f</i> exceeded 10%. Notably, increasing the flow rate ratio of the reactive gas significantly enhanced the resistance and temperature sensitivity of the ZrN<sub>x</sub> thin films. In particular, the sample with <i>f</i> = 80% exhibited a relatively high-temperature coefficient of resistance (TCR) of 2.2% K⁻<sup>1</sup> at elevated temperatures (near 298&#xa0;K). Moreover, the conduction mechanism fitting results indicated the crossover of different conduction mechanisms. The enhanced lattice distortion, phase transition in the ZrN<sub>x</sub> films, and extension of the Mott-variable-range hopping (Mott-VRH) and Efros-Shklovskii variable-range hopping (ES-VRH) conduction mechanisms into the high-temperature region contributed to the improved temperature sensitivity. These results demonstrate the competing and tunable conduction mechanisms in zirconium nitride thin films, offering both theoretical insights and practical guidance for the development of high-sensitivity thermometers with a wide temperature range.</p>

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Tunable conduction mechanisms and sensitivity enhancement in ZrNx thin films for high-performance thermometer applications

  • 期刊论文

  • 发表日期：

    2026年1月6日

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  • Qidi Kou,
  • Bin Zhang,
  • Xiaokui Kang,
  • Jin Xu,
  • Dayu Zhou

摘要

Zirconium nitride (ZrN) thin films were deposited on SiO2/Si substrates via direct current reactive magnetron sputtering (DCMS), with the reactive gas flow rate ratio, denoted as f (the ratio of N2 to the total flow of N2 and Ar), adjusted from 10 to 80%. The microstructure and electrical properties of the ZrNx thin films were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and a physical property measurement system. As the flow rate ratio of the reactive gas increased, the microstructure evolved from cubic ZrN to poorly crystallized orthorhombic Zr3N4. The resistance–temperature (RT) characteristics measured in the 1.9 K to 400 K range revealed a metal-to-semiconductor transition when f exceeded 10%. Notably, increasing the flow rate ratio of the reactive gas significantly enhanced the resistance and temperature sensitivity of the ZrNx thin films. In particular, the sample with f = 80% exhibited a relatively high-temperature coefficient of resistance (TCR) of 2.2% K⁻1 at elevated temperatures (near 298 K). Moreover, the conduction mechanism fitting results indicated the crossover of different conduction mechanisms. The enhanced lattice distortion, phase transition in the ZrNx films, and extension of the Mott-variable-range hopping (Mott-VRH) and Efros-Shklovskii variable-range hopping (ES-VRH) conduction mechanisms into the high-temperature region contributed to the improved temperature sensitivity. These results demonstrate the competing and tunable conduction mechanisms in zirconium nitride thin films, offering both theoretical insights and practical guidance for the development of high-sensitivity thermometers with a wide temperature range.