<p>In this study, the g-C<sub>3</sub>N<sub>4</sub>/Fe-ZrO<sub>2</sub> composite photocatalyst was successfully synthesized through a combination of solvothermal and high-temperature calcination methods, and HR-TEM confirmed the embedding of cubic Fe-ZrO<sub>2</sub> within the layered g-C<sub>3</sub>N<sub>4</sub> matrix. Following this, the band structure of the g-C<sub>3</sub>N<sub>4</sub>/Fe-ZrO<sub>2</sub> composite was investigated using DRS, Mott–Schottky, and VB-XPS analyses. Compared with the pure g-C<sub>3</sub>N<sub>4</sub> and Fe-ZrO<sub>2</sub> samples, the g-C<sub>3</sub>N<sub>4</sub>/Fe-ZrO<sub>2</sub> composite exhibited excellent photocatalytic degradation performance for CIP (75%) and TC (85%) under visible light irradiation. In particular, the coupling of g-C<sub>3</sub>N<sub>4</sub> and Fe-ZrO<sub>2</sub> facilitated interfacial electron transfer due to their Fermi level difference, thereby leading to a built-in electric field at the interface. This field not only enabled the highly efficient separation of photogenerated charges by providing a directional driving force but also maintained the excellent redox performance of the semiconductors. Free radical scavenging tests revealed that h⁺ and ·OH radicals contributed to the photocatalytic degradation of antibiotics, while ·O₂<sup>−</sup> was identified as the primary active species.</p>

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g-C3N4/MOFs-derived Fe-ZrO2 composites for photocatalytic degradation of antibiotics

  • Yun Yang,
  • Yiheng Hu,
  • Chengzhi Pei,
  • Tianyu Liu,
  • Shuijin Yang,
  • Huaxin Zhang,
  • Ling Nie

摘要

In this study, the g-C3N4/Fe-ZrO2 composite photocatalyst was successfully synthesized through a combination of solvothermal and high-temperature calcination methods, and HR-TEM confirmed the embedding of cubic Fe-ZrO2 within the layered g-C3N4 matrix. Following this, the band structure of the g-C3N4/Fe-ZrO2 composite was investigated using DRS, Mott–Schottky, and VB-XPS analyses. Compared with the pure g-C3N4 and Fe-ZrO2 samples, the g-C3N4/Fe-ZrO2 composite exhibited excellent photocatalytic degradation performance for CIP (75%) and TC (85%) under visible light irradiation. In particular, the coupling of g-C3N4 and Fe-ZrO2 facilitated interfacial electron transfer due to their Fermi level difference, thereby leading to a built-in electric field at the interface. This field not only enabled the highly efficient separation of photogenerated charges by providing a directional driving force but also maintained the excellent redox performance of the semiconductors. Free radical scavenging tests revealed that h⁺ and ·OH radicals contributed to the photocatalytic degradation of antibiotics, while ·O₂ was identified as the primary active species.