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<p>BiFeO<sub>3</sub> exhibits strong multiferroic behavior at room temperature, characterized by both ferroelectric and antiferromagnetic orderings; however, its practical use is limited by issues such as high leakage current, low magnetization, and phase instability. Doping provides an effective approach to modify its physical properties by triggering structural distortions and phase transitions. In this communication, synthesis, characterization, and application of the Gd-doped BiFeO<sub>3</sub> [Bi<sub>1-x</sub>Gd<sub>x</sub>FeO<sub>3</sub>, x = 0.0, 0.03 &amp; 0.06] ceramics are reported. The preliminary MADU Rietveld refinement reveals the formation of stable rhombohedral crystal symmetry. The average crystallite size and micro-lattice strain are calculated using the Williamson-Hall plots. The characterization of the Fourier Transform Infrared Spectroscopy (FTIR) spectrum reveals the presence of all atomic stretching bonds, confirming the formation of said compounds. The study of the Ultraviolet (UV) visible spectrum of all samples reveals that bandgap energy decreases from 2.99&#xa0;eV to 2.89&#xa0;eV with an increase of Gd concentration from 0.0 to 0.06 in the host. The analysis of the dielectric study reveals a Maxwell–Wagner type of polarization effect in the samples, and the comparative study shows the x = 0.03 sample has better dielectric properties compared to other concentrations. Similarly, the study of the impedance plots reveals semiconducting properties, while the study of modulus plots confirms the presence of a non-Debye type of relaxation mechanism in the studied samples. The analysis of the ac conductivity versus both frequency and temperature reveals the presence of the thermally activated conduction processes. The study of both Nyquist and Cole–Cole plots confirms the semiconducting nature of the samples. The analysis of the resistance versus temperature reveals the Negative Temperature Coefficient (NTC) thermistor nature and may be suitable for temperature sensor devices.</p>

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Influence of lower Gd concentration and temperature in BiFeO3: microstructure, electrical, and infrared properties for device application

  • 期刊论文

  • 发表日期：

    2025年12月23日

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  • Swati Panda,
  • S. K. Parida

摘要

BiFeO3 exhibits strong multiferroic behavior at room temperature, characterized by both ferroelectric and antiferromagnetic orderings; however, its practical use is limited by issues such as high leakage current, low magnetization, and phase instability. Doping provides an effective approach to modify its physical properties by triggering structural distortions and phase transitions. In this communication, synthesis, characterization, and application of the Gd-doped BiFeO3 [Bi1-xGdxFeO3, x = 0.0, 0.03 & 0.06] ceramics are reported. The preliminary MADU Rietveld refinement reveals the formation of stable rhombohedral crystal symmetry. The average crystallite size and micro-lattice strain are calculated using the Williamson-Hall plots. The characterization of the Fourier Transform Infrared Spectroscopy (FTIR) spectrum reveals the presence of all atomic stretching bonds, confirming the formation of said compounds. The study of the Ultraviolet (UV) visible spectrum of all samples reveals that bandgap energy decreases from 2.99 eV to 2.89 eV with an increase of Gd concentration from 0.0 to 0.06 in the host. The analysis of the dielectric study reveals a Maxwell–Wagner type of polarization effect in the samples, and the comparative study shows the x = 0.03 sample has better dielectric properties compared to other concentrations. Similarly, the study of the impedance plots reveals semiconducting properties, while the study of modulus plots confirms the presence of a non-Debye type of relaxation mechanism in the studied samples. The analysis of the ac conductivity versus both frequency and temperature reveals the presence of the thermally activated conduction processes. The study of both Nyquist and Cole–Cole plots confirms the semiconducting nature of the samples. The analysis of the resistance versus temperature reveals the Negative Temperature Coefficient (NTC) thermistor nature and may be suitable for temperature sensor devices.