Preparation, microstructure, and interconnect performance of porous copper using NaCl as pore-forming agent
摘要
To address the increasing requirements for packaging density and service temperature in power devices, third-generation power semiconductors (SiC, GaN) exhibiting superior thermal and electrical properties have been progressively adopted. However, conventional interconnect materials mainly utilize Sn-based solder paste characterized by low melting points, limiting their high-temperature applications. This manuscript prepared a novel interconnect material through fabrication of three-dimensionally continuous p0orous copper structures via copper oxide powder reduction sintering and Sn infiltration technique. Compared to SAC305 solder, the thermal conductivity of the interconnect layers increased from 58.00 to 81.87 W m−1 K−1, and shear strength was increased from 42 MPa to 70.7 MPa. The service temperature of SiC device packaged by SAC-infiltrated porous Cu elevated from 175 °C to 215 °C, demonstrating the technical viability of this porous copper-based interconnect system for advanced power device thermal management.