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<p>In this study, ZnO<sub>x</sub> thin films were deposited by RF magnetron sputtering under varying oxygen partial pressures, with O<sub>2</sub>/(O<sub>2</sub> + Ar) ratios ranging from 10 to 40%. X-ray diffraction (XRD) confirmed the formation of a hexagonal wurtzite ZnO phase, with the O<sub>2</sub>/(O<sub>2</sub> + Ar) ratio significantly influencing crystallinity and growth orientation. Optimal structural quality was achieved at a ratio of approximately 20%. Energy-dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM) revealed improved stoichiometry and the development of a columnar microstructure with increasing O<sub>2</sub>/(O<sub>2</sub> + Ar) ratio. Atomic force microscopy (AFM) showed a pronounced reduction in surface roughness, reaching a minimum at 20–25%. Optical transmittance peaked at 84.25% for films deposited at a 25% O<sub>2</sub>/(O<sub>2</sub> + Ar) ratio, accompanied by a direct optical band gap of ~ 3.14&#xa0;eV. Photoluminescence (PL) spectra showed enhanced near-band-edge UV emission and diminished defect-related visible emissions under optimal oxygen conditions. Electrical measurements indicated increasing resistivity and decreasing carrier concentration with higher O<sub>2</sub>/(O<sub>2</sub> + Ar) ratios. Maximum Hall mobility and figure of merit were observed at a 25% O<sub>2</sub>/(O<sub>2</sub> + Ar) ratio. These findings highlight the crucial role of oxygen content in the plasma gas mixture for tailoring ZnO<sub>x</sub> thin films toward advanced optoelectronic applications.</p>

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Tailoring microstructural and optoelectronic properties of ZnOx thin film via oxygen content in radio frequency reactive magnetron sputtering

  • 期刊论文

  • 发表日期：

    2025年12月18日

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  • A. Chelouche,
  • T. Touam,
  • D. Mendil,
  • D. Djouadi,
  • F. Challali

摘要

In this study, ZnOx thin films were deposited by RF magnetron sputtering under varying oxygen partial pressures, with O2/(O2 + Ar) ratios ranging from 10 to 40%. X-ray diffraction (XRD) confirmed the formation of a hexagonal wurtzite ZnO phase, with the O2/(O2 + Ar) ratio significantly influencing crystallinity and growth orientation. Optimal structural quality was achieved at a ratio of approximately 20%. Energy-dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM) revealed improved stoichiometry and the development of a columnar microstructure with increasing O2/(O2 + Ar) ratio. Atomic force microscopy (AFM) showed a pronounced reduction in surface roughness, reaching a minimum at 20–25%. Optical transmittance peaked at 84.25% for films deposited at a 25% O2/(O2 + Ar) ratio, accompanied by a direct optical band gap of ~ 3.14 eV. Photoluminescence (PL) spectra showed enhanced near-band-edge UV emission and diminished defect-related visible emissions under optimal oxygen conditions. Electrical measurements indicated increasing resistivity and decreasing carrier concentration with higher O2/(O2 + Ar) ratios. Maximum Hall mobility and figure of merit were observed at a 25% O2/(O2 + Ar) ratio. These findings highlight the crucial role of oxygen content in the plasma gas mixture for tailoring ZnOx thin films toward advanced optoelectronic applications.