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<p>Amorphous oxide semiconductors (AOSs) are emerging as strong alternatives to silicon-based materials due to their high field-effect mobility, low processing temperatures, simple fabrication, and high optical transmittance. In this study, we investigated the influence of different oxygen vacancy suppressors—gallium (Ga), aluminum (Al), and hafnium (Hf)—on the electrical performance of amorphous Zn-Sn–O (a-ZTO) thin-film transistors (TFTs). These suppressors were selected for their varying oxygen-binding energies: Ga-O (285&#xa0;kJ/mol), Al-O (512&#xa0;kJ/mol), and Hf–O (791&#xa0;kJ/mol). Our results show that higher binding energies lead to a reduction in oxygen vacancies, thereby improving device stability but lowering carrier concentration. Among the three, Ga-doped ZTO (GZTO) exhibited the highest field-effect mobility of 19.8 cm<sup>2</sup>/V·s, while Hf-doped ZTO (HZTO) showed superior stability under thermal and bias stress tests. These findings highlight the critical role of oxygen vacancy suppressor chemistry in tuning the electrical properties of AOS TFTs and demonstrate their potential for application in n-type logic circuits and next-generation electronics.</p>

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Role of various oxygen vacancy suppressors on the electrical performance of amorphous Zn-Sn-O thin film transistors

  • 期刊论文

  • 发表日期：

    2025年12月17日

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  • Sunjin Lee,
  • Sang Ji Kim,
  • Sang Yeol Lee

摘要

Amorphous oxide semiconductors (AOSs) are emerging as strong alternatives to silicon-based materials due to their high field-effect mobility, low processing temperatures, simple fabrication, and high optical transmittance. In this study, we investigated the influence of different oxygen vacancy suppressors—gallium (Ga), aluminum (Al), and hafnium (Hf)—on the electrical performance of amorphous Zn-Sn–O (a-ZTO) thin-film transistors (TFTs). These suppressors were selected for their varying oxygen-binding energies: Ga-O (285 kJ/mol), Al-O (512 kJ/mol), and Hf–O (791 kJ/mol). Our results show that higher binding energies lead to a reduction in oxygen vacancies, thereby improving device stability but lowering carrier concentration. Among the three, Ga-doped ZTO (GZTO) exhibited the highest field-effect mobility of 19.8 cm2/V·s, while Hf-doped ZTO (HZTO) showed superior stability under thermal and bias stress tests. These findings highlight the critical role of oxygen vacancy suppressor chemistry in tuning the electrical properties of AOS TFTs and demonstrate their potential for application in n-type logic circuits and next-generation electronics.