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<p>In this study, an orthogonal experiment was fulfilled to reveal the synergistic effect of main brazing parameters on the microstructure and performance of the active metal brazing (AMB) Cu-metalized Si<sub>3</sub>N<sub>4</sub> substrates. Effects of brazing temperature, holding time, and filler-layer thickness on the microstructure and peeling strength of the substrates were also investigated. Moreover, a modified thermodynamic calculation was executed to describe the solder layer/Si<sub>3</sub>N<sub>4</sub> substrate interfacial reactions more accurately. The results show that the brazing temperature has the most significant influence on the peeling strength of the substrates. After brazing at 830&#xa0;°C for 60&#xa0;min with a filler-layer thickness of 60&#xa0;μm, the substrates have the highest peeling strength and rather low porosity. The solder layer/Si<sub>3</sub>N<sub>4</sub> interfacial reaction produces TiN and Ti<sub>5</sub>Si<sub>3</sub>, but the generation of TiN is more thermodynamically favored. The continuous TiN layer and uniformly distributed Ti<sub>5</sub>Si<sub>3</sub> particles in the solder layer are beneficial to the improvement of the peeling strength of the substrates. However, the excessive solder/Si<sub>3</sub>N<sub>4</sub> interfacial reaction degrades the performance of the substrates.</p>

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Processing optimization and interfacial peeling strength of the AMB Cu‐metalized Si3N4 substrates

  • 期刊论文

  • 发表日期：

    2025年12月16日

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  • Xianpeng Zhang,
  • Haixian Xu,
  • Jiaxu Zhu,
  • Zean Zhou,
  • Jun Zhan,
  • Wenming Tang

摘要

In this study, an orthogonal experiment was fulfilled to reveal the synergistic effect of main brazing parameters on the microstructure and performance of the active metal brazing (AMB) Cu-metalized Si3N4 substrates. Effects of brazing temperature, holding time, and filler-layer thickness on the microstructure and peeling strength of the substrates were also investigated. Moreover, a modified thermodynamic calculation was executed to describe the solder layer/Si3N4 substrate interfacial reactions more accurately. The results show that the brazing temperature has the most significant influence on the peeling strength of the substrates. After brazing at 830 °C for 60 min with a filler-layer thickness of 60 μm, the substrates have the highest peeling strength and rather low porosity. The solder layer/Si3N4 interfacial reaction produces TiN and Ti5Si3, but the generation of TiN is more thermodynamically favored. The continuous TiN layer and uniformly distributed Ti5Si3 particles in the solder layer are beneficial to the improvement of the peeling strength of the substrates. However, the excessive solder/Si3N4 interfacial reaction degrades the performance of the substrates.