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<p>Cadmium telluride (CdTe) has potential for solar cell applications and has unique properties such as a high absorption coefficient, economic, better power conversion efficiency, and better stability. However, variations in transmittance, lower p-type conductivity, and recombination loss due to interface defects. This research intends to overcome and enrich the opto-electrical properties of CdTe featuring a 40–70&#xa0;nm (with 10&#xa0;nm interval) Zinc selenide (ZnSe) buffer layer and a constant layer thickness of molybdenum (Mo) back contact through the thermal evaporation technique. The effect of ZnSe layer thickness on opto-electrical properties of CdTe cell layers is investigated, and at the optimal ZnSe thickness of 70&#xa0;nm, XRD analysis reveals a significant improvement in crystallinity and grain growth, with a grain size of 48&#xa0;nm. Additionally, electrical conductivity reaches 7.5 × 10<sup>–3</sup> S/cm, and transmittance increases to 72%. The optical band gap, derived from the Tauc plot, is determined to be 2.65&#xa0;eV. Moreover, the current–voltage (J-V) curve at this thickness shows a V<sub>oc</sub> of 0.82&#xa0;V, a Jsc of 27.3&#xa0;mA/cm<sup>2</sup>, and a power conversion efficiency (PCE) of 19%, indicating notable enhancements in the solar cell’s overall functional performance.</p>

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Featuring and combining of ZnSe buffer thickness and Mo back contact for enhanced CdTe solar cell performance

  • 期刊论文

  • 发表日期：

    2025年12月2日

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  • Gopal Kaliyaperumal,
  • Nagabhooshanam Nagarajan,
  • Sharad Rathore,
  • Ankur Kulshreshta,
  • C. Santha Sheela,
  • D. Beulah,
  • Ramya Maranan,
  • M. Murali,
  • S. Sathiyamurthy

摘要

Cadmium telluride (CdTe) has potential for solar cell applications and has unique properties such as a high absorption coefficient, economic, better power conversion efficiency, and better stability. However, variations in transmittance, lower p-type conductivity, and recombination loss due to interface defects. This research intends to overcome and enrich the opto-electrical properties of CdTe featuring a 40–70 nm (with 10 nm interval) Zinc selenide (ZnSe) buffer layer and a constant layer thickness of molybdenum (Mo) back contact through the thermal evaporation technique. The effect of ZnSe layer thickness on opto-electrical properties of CdTe cell layers is investigated, and at the optimal ZnSe thickness of 70 nm, XRD analysis reveals a significant improvement in crystallinity and grain growth, with a grain size of 48 nm. Additionally, electrical conductivity reaches 7.5 × 10–3 S/cm, and transmittance increases to 72%. The optical band gap, derived from the Tauc plot, is determined to be 2.65 eV. Moreover, the current–voltage (J-V) curve at this thickness shows a Voc of 0.82 V, a Jsc of 27.3 mA/cm2, and a power conversion efficiency (PCE) of 19%, indicating notable enhancements in the solar cell’s overall functional performance.