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<p>Vanadium diselenide (VSe<sub>2</sub>) has attracted a significant attention for spintronic and memory devices, catalytic reactions, and sensors because of its superior magnetic and electrical properties. However, the high oxidation tendency of vanadium (V) makes the synthesis of VSe<sub>2</sub> challenging, making it one of the least studied two-dimensional (2D) materials. In the present study, a novel two-step method was developed to synthesize oxide-free VSe<sub>2</sub> thin films. In the first step, V metallic film was deposited on SiO<sub>2</sub>/Si substrates using radio frequency (RF) sputter method. X-ray diffraction (XRD) measurements showed that the V thin film oxidized in the form of VO<sub>0.532</sub> crystal structure. After VO<sub>0.532</sub> film was thermally selenized in a chemical vapor deposition (CVD) reaction tube, both V<sub>x</sub>O<sub>y</sub> and VSe<sub>2</sub> structures were observed. The oxidation was successfully suppressed by pre-hydrogenation before thermal selenization. Subsequently, the thermal selenization was carried for varying durations, and different phases of V and Se were obtained depending on the selenization time. It was also found the thickness values of the films were strongly dependent on the selenization time. The electrical measurements were conducted on the V<sub>x</sub>Se<sub>y</sub> films, and their electrical properties were compared based on selenization time.</p>

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Novel two-step synthesis and characterization of oxide-free vanadium diselenide thin films

  • 期刊论文

  • 发表日期：

    2025年11月19日

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  • Zeynep Elif Özerbaş,
  • Ayça Coşkun,
  • Kerem Turalıoğlu,
  • Mehtap Aygün Çağlar,
  • Güven Turgut

摘要

Vanadium diselenide (VSe2) has attracted a significant attention for spintronic and memory devices, catalytic reactions, and sensors because of its superior magnetic and electrical properties. However, the high oxidation tendency of vanadium (V) makes the synthesis of VSe2 challenging, making it one of the least studied two-dimensional (2D) materials. In the present study, a novel two-step method was developed to synthesize oxide-free VSe2 thin films. In the first step, V metallic film was deposited on SiO2/Si substrates using radio frequency (RF) sputter method. X-ray diffraction (XRD) measurements showed that the V thin film oxidized in the form of VO0.532 crystal structure. After VO0.532 film was thermally selenized in a chemical vapor deposition (CVD) reaction tube, both VxOy and VSe2 structures were observed. The oxidation was successfully suppressed by pre-hydrogenation before thermal selenization. Subsequently, the thermal selenization was carried for varying durations, and different phases of V and Se were obtained depending on the selenization time. It was also found the thickness values of the films were strongly dependent on the selenization time. The electrical measurements were conducted on the VxSey films, and their electrical properties were compared based on selenization time.