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<p>The pursuit of enhanced performance in pH sensors is crucial for expanding their applications across various industrial fields. This work presents a systematic investigation into the electrical characteristics and pH sensitivity of AlGaN/GaN sensors, through comparative analysis of sensors with varying <i>W</i>/<i>L</i> ratios (where <i>W</i> and <i>L</i> denote gate width and length, respectively) and with/without recessed-gate. The primary optimization strategy was to enhancing current sensitivity (<i>S</i><sub>A</sub>) by maximizing sensor transconductance. The synergistic combination of recessed-gate implementation and <i>W</i>/<i>L</i> ratio optimization yielded a 16-fold improvement in maximum transconductance (<i>G</i><sub>M</sub>), increasing from 0.82 mS (without recessed-gate, <i>W</i>/<i>L</i> = 800/800&#xa0;μm) to 13.18 mS (with recessed-gate, <i>W</i>/<i>L</i> = 800/200&#xa0;μm). This substantial boost in transconductance directly translated to a superior sensing capability. The current sensitivity (<i>S</i><sub>A</sub>) experienced a corresponding 13.2-fold increase, rising from 40.3 μA/pH to 532.7 μA/pH. Furthermore, over the course of 500 repeated measurements, the drift of reference electrode voltage (<i>V</i><sub>REF</sub>) ranged between 35 and 53&#xa0;mV, demonstrating excellent stability.</p>

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Enhanced current sensitivity of AlGaN/GaN pH sensor by combining recessed-gate and increasing the ratio of W/L

  • 期刊论文

  • 发表日期：

    2025年11月20日

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  • Liqiang Wang,
  • Xiao Wang,
  • Ming Guo,
  • Xia Zhu,
  • Jiyu Zhou,
  • Yingzhao Geng,
  • Hao Wu,
  • Zhiwei Chen,
  • Jie You,
  • Sen Zhao,
  • Yang Li,
  • Zhangcheng Liu,
  • Dawei Yan,
  • Lihua Bai,
  • Ziyang Hu,
  • Jinping Ao

摘要

The pursuit of enhanced performance in pH sensors is crucial for expanding their applications across various industrial fields. This work presents a systematic investigation into the electrical characteristics and pH sensitivity of AlGaN/GaN sensors, through comparative analysis of sensors with varying W/L ratios (where W and L denote gate width and length, respectively) and with/without recessed-gate. The primary optimization strategy was to enhancing current sensitivity (SA) by maximizing sensor transconductance. The synergistic combination of recessed-gate implementation and W/L ratio optimization yielded a 16-fold improvement in maximum transconductance (GM), increasing from 0.82 mS (without recessed-gate, W/L = 800/800 μm) to 13.18 mS (with recessed-gate, W/L = 800/200 μm). This substantial boost in transconductance directly translated to a superior sensing capability. The current sensitivity (SA) experienced a corresponding 13.2-fold increase, rising from 40.3 μA/pH to 532.7 μA/pH. Furthermore, over the course of 500 repeated measurements, the drift of reference electrode voltage (VREF) ranged between 35 and 53 mV, demonstrating excellent stability.