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<p>In this paper, ReS<sub>2</sub>/PANI composites were fabricated using a simple ultrasonic dripping method. A hybrid material was formed through the interaction between the p-type conductive polymer PANI and the n-type ReS<sub>2</sub>. This structure improved the utilization of photogenerated carriers and enhanced the photodetection performance. The ReS<sub>2</sub>/PANI-based PDs exhibited a maximum responsivity of 27 μA/W under simulated light illumination at 0 V bias, with a response time of approximately 0.42 s. The responsivity was approximately one order of magnitude higher than that of PDs constructed with ReS<sub>2</sub> alone, and the response time was reduced from 5 s to 0.42 s. Under illumination with different wavelengths of light, the light absorption was strongest at the ultraviolet wavelength of 365 nm, where a peak responsivity of 60 μA/W was even reached. This work demonstrates the potential of the ReS<sub>2</sub>/PANI heterostructure for developing self-powered photodetectors with promising optoelectronic properties and robust stability, providing a reference for further research in this field.</p>

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A robust photoelectrochemical type photodetector based on ReS2-PANI composite material

  • 期刊论文

  • 发表日期：

    2025年11月24日

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  • Zhirou Wu,
  • Rong Zhang,
  • Muyang Huang,
  • Bingwei Li,
  • Jun Li

摘要

In this paper, ReS2/PANI composites were fabricated using a simple ultrasonic dripping method. A hybrid material was formed through the interaction between the p-type conductive polymer PANI and the n-type ReS2. This structure improved the utilization of photogenerated carriers and enhanced the photodetection performance. The ReS2/PANI-based PDs exhibited a maximum responsivity of 27 μA/W under simulated light illumination at 0 V bias, with a response time of approximately 0.42 s. The responsivity was approximately one order of magnitude higher than that of PDs constructed with ReS2 alone, and the response time was reduced from 5 s to 0.42 s. Under illumination with different wavelengths of light, the light absorption was strongest at the ultraviolet wavelength of 365 nm, where a peak responsivity of 60 μA/W was even reached. This work demonstrates the potential of the ReS2/PANI heterostructure for developing self-powered photodetectors with promising optoelectronic properties and robust stability, providing a reference for further research in this field.