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<p>In this study, Bismuth and Nitrogen co-doped ZnO ceramics with the general formula (Bi<sub>1/6</sub>N<sub>5/6</sub>)<sub><i>x</i></sub>Zn<sub>1−<i>x</i></sub>O (<i>x</i> = 0, 0.06, 0.12, 0.18, 0.24) were synthesized using the sol–gel method. The dielectric and impedance properties of the synthesized ceramics were examined as functions of dopant concentration, temperature, and frequency. Dielectric measurements indicated that the dielectric constant and dielectric loss of ZnO ceramics were reduced by Bi and N co-doping, with both properties increasing continuously with temperature at high frequencies. Nyquist plots indicated non-Debye relaxation behavior in the samples. Consistent with the observed electrical properties, both the real and imaginary parts of the impedance rose with increasing Bi and N concentration. Furthermore, grain boundary contributions prevailed over grain contributions to the electrical properties. In conclusion, the present study demonstrates that the incorporation of Bi and N dopants into ZnO ceramics plays a significant role in modifying its structural, optical, dielectric, and transport properties.</p>

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Tuning of intrinsic defects in ZnO ceramics by (Bi, N) doping and their effect on dielectric properties

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • Yong-Hui Zhou,
  • Yu-Yan Shen,
  • Yong Chen,
  • Mao-Hua Wang

摘要

In this study, Bismuth and Nitrogen co-doped ZnO ceramics with the general formula (Bi1/6N5/6)xZn1−xO (x = 0, 0.06, 0.12, 0.18, 0.24) were synthesized using the sol–gel method. The dielectric and impedance properties of the synthesized ceramics were examined as functions of dopant concentration, temperature, and frequency. Dielectric measurements indicated that the dielectric constant and dielectric loss of ZnO ceramics were reduced by Bi and N co-doping, with both properties increasing continuously with temperature at high frequencies. Nyquist plots indicated non-Debye relaxation behavior in the samples. Consistent with the observed electrical properties, both the real and imaginary parts of the impedance rose with increasing Bi and N concentration. Furthermore, grain boundary contributions prevailed over grain contributions to the electrical properties. In conclusion, the present study demonstrates that the incorporation of Bi and N dopants into ZnO ceramics plays a significant role in modifying its structural, optical, dielectric, and transport properties.