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<p>In this study, we investigated the impact of antimony (Sb) and selenium (Se) co-dopants on the thermoelectric properties of bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>). Our findings reveal that Sb doping significantly enhances the electrical conductivity of the material, increasing it by a factor of 2.83 for (Bi<sub>0.98</sub>Sb<sub>0.02</sub>)<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub>, primarily due to an increase in carrier concentration. The electrical resistivity of pristine Bi<sub>2</sub>Te<sub>3</sub> at 300&#xa0;K is 2.79 × 10<sup>−4</sup>&#xa0;Ω·m, which decreases substantially to 0.006 × 10<sup>−4</sup>&#xa0;Ω·m at 303&#xa0;K with Sb doping at <i>x</i> = 0.02. Additionally, (Bi<sub>0.96</sub>Sb<sub>0.04</sub>)<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> composition achieves the highest power factor of 9.744 × 10⁻<sup>5</sup>&#xa0;W/m·K<sup>2</sup> at 300&#xa0;K, a 3-times improvement over the pristine Bi<sub>2</sub>Te<sub>3</sub> (3.143 × 10<sup>−5</sup>&#xa0;W/m·K<sup>2</sup>). The ZT value of Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> is 3.5 times higher than that of the pristine material at 350&#xa0;K. COMSOL simulations support the experimental findings, revealing a maximum temperature gradient of 35&#xa0;°C (hot end: 20&#xa0;°C, cold end: −&#xa0;15&#xa0;°C) for the (Bi<sub>0.98</sub>Sb<sub>0.02</sub>)<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> module with comparable <i>p</i>-type and <i>n</i>-type parameters. The increased temperature gradient in the COMSOL simulation correlates with the improved thermoelectric performance observed experimentally, indicating that co-doping Bi<sub>2</sub>Te<sub>3</sub> with Sb and Se effectively enhances its thermoelectric properties.</p>

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Optimizing thermoelectric properties of Bi2Te3 via Sb and Se Co-doping: experimental insights and finite elemental simulations using COMSOL

  • 期刊论文

  • 发表日期：

    2025年12月2日

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  • Suchitra Puthran,
  • Ashwatha Narayana Prabhu,
  • Mayuri Kamble,
  • Perum Delli Babu,
  • Sindhur Joshi,
  • N. K. Udayashankar

摘要

In this study, we investigated the impact of antimony (Sb) and selenium (Se) co-dopants on the thermoelectric properties of bismuth telluride (Bi2Te3). Our findings reveal that Sb doping significantly enhances the electrical conductivity of the material, increasing it by a factor of 2.83 for (Bi0.98Sb0.02)2Te2.7Se0.3, primarily due to an increase in carrier concentration. The electrical resistivity of pristine Bi2Te3 at 300 K is 2.79 × 10−4 Ω·m, which decreases substantially to 0.006 × 10−4 Ω·m at 303 K with Sb doping at x = 0.02. Additionally, (Bi0.96Sb0.04)2Te2.7Se0.3 composition achieves the highest power factor of 9.744 × 10⁻5 W/m·K2 at 300 K, a 3-times improvement over the pristine Bi2Te3 (3.143 × 10−5 W/m·K2). The ZT value of Bi2Te2.7Se0.3 is 3.5 times higher than that of the pristine material at 350 K. COMSOL simulations support the experimental findings, revealing a maximum temperature gradient of 35 °C (hot end: 20 °C, cold end: − 15 °C) for the (Bi0.98Sb0.02)2Te2.7Se0.3 module with comparable p-type and n-type parameters. The increased temperature gradient in the COMSOL simulation correlates with the improved thermoelectric performance observed experimentally, indicating that co-doping Bi2Te3 with Sb and Se effectively enhances its thermoelectric properties.