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<p>To improve the optical performance and electrical stability of indium oxide (In<sub>2</sub>O<sub>3</sub>) films for smart wearable devices, silicon dioxide (SiO<sub>2</sub>) layers of various thicknesses were deposited on the In<sub>2</sub>O<sub>3</sub> films via magnetron sputtering. The results indicated that the surface roughness of the SiO<sub>2</sub>-coated In<sub>2</sub>O<sub>3</sub> multi-layers decreased as the SiO<sub>2</sub> layer thickness increased to 105&#xa0;nm, producing a smooth surface. Upon further increasing the thickness to 140&#xa0;nm, the roughness began to increase. The transmittance of the films increased, guided by interfacial principles that reduce Fresnel loss and promote the interference cancellation effect, reaching a maximum transmittance of 91.75%. In accordance with the parallel-resistance theory, the sheet resistances of the films ranged from 50 to 68 Ω·sq⁻<sup>1</sup>. Consequently, the figure of merit (FOM) improved from 1.75 × 10⁻<sup>3</sup> Ω⁻<sup>1</sup> for the bare In<sub>2</sub>O<sub>3</sub> film to 6.85 × 10⁻<sup>3</sup> Ω⁻<sup>1</sup> for the film coated with a 105&#xa0;nm SiO<sub>2</sub> layer. Additionally, sweat-etching tests demonstrated that the 105&#xa0;nm SiO<sub>2</sub>-coated film provided complete isolation from corrosion by H<sup>+</sup> and OH<sup>–</sup>. This protection, attributed to the layer’s chemical inertness and low roughness, produced a nearly unchanged FOM after soaking. By contrast, the multi-layer 130&#xa0;nm SiO<sub>2</sub>-coated film showed poor resistance to corrosion by OH<sup>–</sup>, which was attributed to its increased surface roughness. The 65–110&#xa0;nm SiO<sub>2</sub> layers effectively dispersed mechanical stress owing to their hardness, and their low surface roughness provided a smooth contact surface; consequently, the FOM remained in the order of 10<sup>−4</sup> after simulated wearing. However, the 140&#xa0;nm SiO<sub>2</sub> layer spalled off in large pieces from the In<sub>2</sub>O<sub>3</sub> film during the wearing test, likely owing to stress accumulation from increased roughness, causing the FOM to drop to the order of 10<sup>–5</sup>. In summary, a 105&#xa0;nm SiO<sub>2</sub> layer on the In<sub>2</sub>O<sub>3</sub> film provided the best overall optical and electrical stability, offering a promising approach for designing transparent conductive multi-layer films for wearable devices.</p>

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Enhancing the optical and electrical stability of In2O3 films with an optimized SiO2 protective layer

  • 期刊论文

  • 发表日期：

    2025年11月10日

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  • Caibo Yan,
  • Zhiwei Su,
  • Zhuo Zhao,
  • Yanwen Zhou

摘要

To improve the optical performance and electrical stability of indium oxide (In2O3) films for smart wearable devices, silicon dioxide (SiO2) layers of various thicknesses were deposited on the In2O3 films via magnetron sputtering. The results indicated that the surface roughness of the SiO2-coated In2O3 multi-layers decreased as the SiO2 layer thickness increased to 105 nm, producing a smooth surface. Upon further increasing the thickness to 140 nm, the roughness began to increase. The transmittance of the films increased, guided by interfacial principles that reduce Fresnel loss and promote the interference cancellation effect, reaching a maximum transmittance of 91.75%. In accordance with the parallel-resistance theory, the sheet resistances of the films ranged from 50 to 68 Ω·sq⁻1. Consequently, the figure of merit (FOM) improved from 1.75 × 10⁻3 Ω⁻1 for the bare In2O3 film to 6.85 × 10⁻3 Ω⁻1 for the film coated with a 105 nm SiO2 layer. Additionally, sweat-etching tests demonstrated that the 105 nm SiO2-coated film provided complete isolation from corrosion by H+ and OH–. This protection, attributed to the layer’s chemical inertness and low roughness, produced a nearly unchanged FOM after soaking. By contrast, the multi-layer 130 nm SiO2-coated film showed poor resistance to corrosion by OH–, which was attributed to its increased surface roughness. The 65–110 nm SiO2 layers effectively dispersed mechanical stress owing to their hardness, and their low surface roughness provided a smooth contact surface; consequently, the FOM remained in the order of 10−4 after simulated wearing. However, the 140 nm SiO2 layer spalled off in large pieces from the In2O3 film during the wearing test, likely owing to stress accumulation from increased roughness, causing the FOM to drop to the order of 10–5. In summary, a 105 nm SiO2 layer on the In2O3 film provided the best overall optical and electrical stability, offering a promising approach for designing transparent conductive multi-layer films for wearable devices.