<p>The Pd-doped Bi₂Te₃ thin film flexible modules were fabricated using a co-magnetron sputtering system on polyimide flexible substrates. Through the optimization of Pd-doped Bi₂Te₃ thin films, we employed a co-magnetron sputtering technique with varying DC sputtering powers on the Pd target (0, 4, 8, and 12W). In contrast, the pulsed-DC power source for the Bi₂Te₃ target was fixed at 30 W. It was found that increasing the Pd content reduced the electrical resistivity. In contrast, a low concentration of Pd increased the negative Seebeck coefficient. At room temperature, the maximum power factor of 1.34 × 10⁻⁴ W m⁻¹&#xa0;K⁻² (ρ = 48.5 μΩ·m, <i>S</i> = –80&#xa0;μV&#xa0;K⁻¹) was observed for the Pd-doped Bi₂Te₃ thin film (Pd_4W) sample. The practical application of the Pd-doped Bi₂Te₃ thin film (Pd_4W) was demonstrated in a thermoelectric module comprising five couples of Pd-doped Sb₂Te₃ (p-type) and Pd-doped Bi₂Te₃ (n-type) thin films, achieving an output power of 24 nW at Δ<i>T</i> = 65&#xa0;K.</p>