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<p>Radiation-induced failures from low-energy α-particles have become a critical challenge for the reliability of modern integrated circuits. With the continuous downscaling and higher integration of semiconductor devices, α-particle-induced single event effects and soft errors significantly impact device performance. In this work, a rapid defect detection system for advanced electronic materials was developed using an ultra-low background α-particle surface radiation detector. Taking silicon wafers as an example, the mechanisms of defect formation and their correlation with <i>α</i>-particle emissivity were systematically investigated. Through multi-scale characterization techniques (TEM, SEM, XRD, Raman, AFM), the evolution of defects under different energy inputs was revealed. The results show a strong linear negative correlation between wafer defect concentration and α-particle emissivity (<i>y</i> =  − 0.347<i>x</i> + 0.00413, <i>R</i><sup>2</sup> = 0.9873). α-particle irradiation increased surface roughness, aggravated lattice distortion, and induced amorphization at High doses. This work offers a fast and reliable route for nondestructive defect detection and reliability evaluation of next-generation semiconductor materials.</p>

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Ultra-low α-particle detection and defect analysis methods for advanced electronic materials

  • 期刊论文

  • 发表日期：

    2025年11月18日

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  • Shaojia Qi,
  • Fan Zhang,
  • Siqi Qiu,
  • Chongyang Zeng,
  • Zihong Rao,
  • Changhao Wu,
  • Hongliang Wu,
  • Jinlai Zhao,
  • Jizhao Zou

摘要

Radiation-induced failures from low-energy α-particles have become a critical challenge for the reliability of modern integrated circuits. With the continuous downscaling and higher integration of semiconductor devices, α-particle-induced single event effects and soft errors significantly impact device performance. In this work, a rapid defect detection system for advanced electronic materials was developed using an ultra-low background α-particle surface radiation detector. Taking silicon wafers as an example, the mechanisms of defect formation and their correlation with α-particle emissivity were systematically investigated. Through multi-scale characterization techniques (TEM, SEM, XRD, Raman, AFM), the evolution of defects under different energy inputs was revealed. The results show a strong linear negative correlation between wafer defect concentration and α-particle emissivity (y =  − 0.347x + 0.00413, R2 = 0.9873). α-particle irradiation increased surface roughness, aggravated lattice distortion, and induced amorphization at High doses. This work offers a fast and reliable route for nondestructive defect detection and reliability evaluation of next-generation semiconductor materials.