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<p>In the present communication, La<sub>0.5</sub>Gd<sub>0.2</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> (LGCMO) manganite films, were grown on a single-crystalline (<i>200</i>) substrate LaAlO<sub>3</sub> (LAO) using the pulsed laser deposition (PLD) technique. Films were irradiated by 200&#xa0;MeV Ag<sup>15+</sup> swift heavy ions (SHI) with different ion fluences. Structural studies were performed using X–ray diffraction (XRD) measurements. Atomic force microscopy (AFM) measurement was performed to understand the granular morphology and surface modifications in LGCMO films due to SHI irradiation. Impedance spectroscopy as a function of frequency was carried out to study the electrical properties of pristine and all irradiated films. Variation in R, Z, and –X with frequency and ion fluence has been discussed in the context of structural strain, granular morphology, grain size, grain boundary and oxygen vacancies. To understand the charge conduction mechanism in the semiconducting region for pristine and all irradiated films, the electrical resistivity data have been fitted using the Mott-type variable range hopping (VRH) model.</p>

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Swift heavy ions irradiation studies on transport and impedance spectroscopic properties of La0.5Gd0.2Ca0.3MnO3 thin films

  • 期刊论文

  • 发表日期：

    2025年11月3日

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  • Apexa Maru,
  • Indrajitsinh Bihola,
  • Bharavi Hirpara,
  • Sagar Sen,
  • Tarundeep Kaur Lamba,
  • Mukesh Ranjan,
  • M. R. Gonal,
  • P. S. Solanki,
  • N. A. Shah,
  • Keval Gadani

摘要

In the present communication, La0.5Gd0.2Ca0.3MnO3 (LGCMO) manganite films, were grown on a single-crystalline (200) substrate LaAlO3 (LAO) using the pulsed laser deposition (PLD) technique. Films were irradiated by 200 MeV Ag15+ swift heavy ions (SHI) with different ion fluences. Structural studies were performed using X–ray diffraction (XRD) measurements. Atomic force microscopy (AFM) measurement was performed to understand the granular morphology and surface modifications in LGCMO films due to SHI irradiation. Impedance spectroscopy as a function of frequency was carried out to study the electrical properties of pristine and all irradiated films. Variation in R, Z, and –X with frequency and ion fluence has been discussed in the context of structural strain, granular morphology, grain size, grain boundary and oxygen vacancies. To understand the charge conduction mechanism in the semiconducting region for pristine and all irradiated films, the electrical resistivity data have been fitted using the Mott-type variable range hopping (VRH) model.