Scholarlink

<p>With the development of the microelectronics industry, traditional interlayer dielectric materials cause significant energy loss and crosstalk noise during signal transmission due to their high dielectric constant, thus giving rise to a pressing need for dielectric materials with low dielectric constant to meet current requirements. In this study, a series of polyimide (PI) films were prepared using 3,3’,4,4’-benzophenonetetracarboxylic dianhydride (BTDA), diphenylmethane diisocyanate (MDI), and Hexamethylene diisocyanate (HDI) as structural units, with TDI trimer serving as both crosslinking agent and branching center. The PI films prepared via the isocyanate-based method exhibited a dielectric constant of 2.64 and dielectric loss of 0.00204 at 10&#xa0;MHz, representing reductions of 21.7% and 63.7%, respectively, compared to linear PI. Its coefficient of thermal expansion (CTE) in the 50–200&#xa0;℃ range was 19.65&#xa0;ppm/K, showing a 68.69% reduction relative to linear PI. Additionally, the film demonstrated excellent thermal properties, insulation performance, and mechanical properties. This work provides a strategic approach for developing interlayer dielectric materials with low dielectric constant and low CTE for microelectronics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Preparation and characterization of soluble polyimide Films with micro-branched crosslinked structure

  • 期刊论文

  • 发表日期：

    2025年11月8日

查看全文
  • Ruoxi Zhang,
  • Xiaorui Zhang,
  • Yang Yu,
  • Ling Weng,
  • Jiahao Shi,
  • Hang Xu,
  • Laiweiqing Liu,
  • Hongda Shen

摘要

With the development of the microelectronics industry, traditional interlayer dielectric materials cause significant energy loss and crosstalk noise during signal transmission due to their high dielectric constant, thus giving rise to a pressing need for dielectric materials with low dielectric constant to meet current requirements. In this study, a series of polyimide (PI) films were prepared using 3,3’,4,4’-benzophenonetetracarboxylic dianhydride (BTDA), diphenylmethane diisocyanate (MDI), and Hexamethylene diisocyanate (HDI) as structural units, with TDI trimer serving as both crosslinking agent and branching center. The PI films prepared via the isocyanate-based method exhibited a dielectric constant of 2.64 and dielectric loss of 0.00204 at 10 MHz, representing reductions of 21.7% and 63.7%, respectively, compared to linear PI. Its coefficient of thermal expansion (CTE) in the 50–200 ℃ range was 19.65 ppm/K, showing a 68.69% reduction relative to linear PI. Additionally, the film demonstrated excellent thermal properties, insulation performance, and mechanical properties. This work provides a strategic approach for developing interlayer dielectric materials with low dielectric constant and low CTE for microelectronics.