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<p>In this study, Al/PVA/Al resistive switching devices were fabricated with different annealing temperatures of polyvinyl alcohol (PVA) to investigate the effect of interface quality, using other models for understanding non-equilibrium Schottky junctions. These junctions showed bistable switching behavior with significant cyclability, non-volatility, and rewritability. The current–voltage (I-V) characteristics of the resistive switching loop area, a significant aspect in identifying interface quality tuned in a limited annealing window from 305&#xa0;K to 363&#xa0;K, indicate charge blockage. The metal–semiconductor junction parameters like reverse saturation current (<i>J</i><sub><i>0</i></sub>), ideality factor (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_16061_Article_IEq1.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="18" /> </InlineMediaObject> <EquationSource Format="TEX">\(\eta )\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi>η</mi> <mo stretchy="false">)</mo> </mrow> </math></EquationSource> </InlineEquation>, barrier height (<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_16061_Article_IEq2.gif" Format="GIF" Height="17" Rendition="HTML" Resolution="72" Type="Linedraw" Width="24" /> </InlineMediaObject> <EquationSource Format="TEX">\({\phi }_{B}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>ϕ</mi> <mi>B</mi> </msub> </math></EquationSource> </InlineEquation>), and series resistance (<i>R</i><sub><i>s</i></sub>) were interpreted using thermionic emission theory. An equivalent set of hybrid parameters were extracted using Cheung’s approach of non-uniform barriers in the junction to examine the effect of annealing. The results were compared with the topographical studies of the polymeric layer.</p>

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Non-uniform barrier height approach to characterize the quality of resistive switching element formed with polyvinyl alcohol

  • 期刊论文

  • 发表日期：

    2025年11月3日

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  • Ranjith M. Ranganathan,
  • R. Mallikarjun,
  • Rajeev S. Joshi

摘要

In this study, Al/PVA/Al resistive switching devices were fabricated with different annealing temperatures of polyvinyl alcohol (PVA) to investigate the effect of interface quality, using other models for understanding non-equilibrium Schottky junctions. These junctions showed bistable switching behavior with significant cyclability, non-volatility, and rewritability. The current–voltage (I-V) characteristics of the resistive switching loop area, a significant aspect in identifying interface quality tuned in a limited annealing window from 305 K to 363 K, indicate charge blockage. The metal–semiconductor junction parameters like reverse saturation current (J0), ideality factor ( \(\eta )\) η ) , barrier height ( \({\phi }_{B}\) ϕ B ), and series resistance (Rs) were interpreted using thermionic emission theory. An equivalent set of hybrid parameters were extracted using Cheung’s approach of non-uniform barriers in the junction to examine the effect of annealing. The results were compared with the topographical studies of the polymeric layer.