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<p>Chitosan (CS) was dissolved in an aqueous acetic acid medium at ambient temperature (26&#xa0;°C) under continuous stirring for 4&#xa0;h until a clear, homogeneous solution was obtained. The solution was cast onto cleaned Petri dishes and dried in an oven at 60&#xa0;°C to yield neat CS films (CS). For the nanocomposites, 1 wt% Ga₂O₃ (relative to CS) and Pr₆O₁₁ at 1, 2, or 4 wt% were dispersed into the CS solution by ultrasonication, followed by magnetic stirring to promote uniform particle distribution. The resulting dispersions were cast and dried under the same thermal conditions to obtain Ga₂O₃–CS and Pr₆O₁₁(x)–Ga₂O₃–CS films, where x = 1, 2, or 4 wt%. All films were stored in a desiccator prior to characterization.Biopolymer dielectrics such as chitosan (CS) are attractive for sustainable electronics but typically suffer from modest dielectric/optical performance and limited thermal robustness. Here, CS-based nanocomposites were fabricated by solution casting with Ga₂O₃ (1 wt%) and incremental Pr₆O₁₁ additions (samples: CS, Ga₂O₃–CS, Pr₆O₁₁(1)–Ga₂O₃–CS, Pr₆O₁₁(2)–Ga₂O₃–CS, Pr₆O₁₁(3)–Ga₂O₃–CS). Structure, morphology, thermal behavior, optics, and dielectric response were evaluated by XRD, SEM–EDS, FTIR, TGA, UV–Vis, and impedance/modulus analysis. XRD indicates a marked crystallite-size reduction from ~ 156&#xa0;nm (CS) to ~ 16&#xa0;nm (Pr₆O₁₁(3)–Ga₂O₃–CS). TGA shows enhanced stability in doped films, with ~ 38% residual mass at 700&#xa0;°C for Pr₆O₁₁(3)–Ga₂O₃–CS. SEM reveals compact aggregates (~ 1.5–3.5&#xa0;µm) embedded in the CS matrix. UV–Vis (Tauc analysis) evidences an apparent optical bandgap decrease to ~ 1.4&#xa0;eV for Ga₂O₃–CS and ~ 1.2&#xa0;eV upon Pr₆O₁₁ co-doping, accompanied by strengthened absorption. Dielectric testing identifies Pr₆O₁₁(3)–Ga₂O₃–CS as the best performer, with ε′ ≈ 380 (at the test frequency) and σ ≈ 8 × 10⁻⁷ S cm⁻<sup>1</sup>; electric-modulus and impedance results indicate non-Debye relaxation with grain-boundary–dominated transport. Overall, Ga₂O₃/Pr₆O₁₁ co-doping of chitosan delivers concurrent optical, thermal, and dielectric improvements, highlighting a simple, solvent-based route to CS films suitable for optoelectronic applications.</p>

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Impact of Ga2O3 and Pr6O11 incorporation on the morphological, thermal, and dielectric behavior of chitosan-based films for electrical applications

  • 期刊论文

  • 发表日期：

    2025年11月3日

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  • Walaa Alharbi,
  • Khadijah H. Alharbi,
  • Mashael M. Alharbi,
  • M. A. El-Morsy,
  • A. A. Menazea

摘要

Chitosan (CS) was dissolved in an aqueous acetic acid medium at ambient temperature (26 °C) under continuous stirring for 4 h until a clear, homogeneous solution was obtained. The solution was cast onto cleaned Petri dishes and dried in an oven at 60 °C to yield neat CS films (CS). For the nanocomposites, 1 wt% Ga₂O₃ (relative to CS) and Pr₆O₁₁ at 1, 2, or 4 wt% were dispersed into the CS solution by ultrasonication, followed by magnetic stirring to promote uniform particle distribution. The resulting dispersions were cast and dried under the same thermal conditions to obtain Ga₂O₃–CS and Pr₆O₁₁(x)–Ga₂O₃–CS films, where x = 1, 2, or 4 wt%. All films were stored in a desiccator prior to characterization.Biopolymer dielectrics such as chitosan (CS) are attractive for sustainable electronics but typically suffer from modest dielectric/optical performance and limited thermal robustness. Here, CS-based nanocomposites were fabricated by solution casting with Ga₂O₃ (1 wt%) and incremental Pr₆O₁₁ additions (samples: CS, Ga₂O₃–CS, Pr₆O₁₁(1)–Ga₂O₃–CS, Pr₆O₁₁(2)–Ga₂O₃–CS, Pr₆O₁₁(3)–Ga₂O₃–CS). Structure, morphology, thermal behavior, optics, and dielectric response were evaluated by XRD, SEM–EDS, FTIR, TGA, UV–Vis, and impedance/modulus analysis. XRD indicates a marked crystallite-size reduction from ~ 156 nm (CS) to ~ 16 nm (Pr₆O₁₁(3)–Ga₂O₃–CS). TGA shows enhanced stability in doped films, with ~ 38% residual mass at 700 °C for Pr₆O₁₁(3)–Ga₂O₃–CS. SEM reveals compact aggregates (~ 1.5–3.5 µm) embedded in the CS matrix. UV–Vis (Tauc analysis) evidences an apparent optical bandgap decrease to ~ 1.4 eV for Ga₂O₃–CS and ~ 1.2 eV upon Pr₆O₁₁ co-doping, accompanied by strengthened absorption. Dielectric testing identifies Pr₆O₁₁(3)–Ga₂O₃–CS as the best performer, with ε′ ≈ 380 (at the test frequency) and σ ≈ 8 × 10⁻⁷ S cm⁻1; electric-modulus and impedance results indicate non-Debye relaxation with grain-boundary–dominated transport. Overall, Ga₂O₃/Pr₆O₁₁ co-doping of chitosan delivers concurrent optical, thermal, and dielectric improvements, highlighting a simple, solvent-based route to CS films suitable for optoelectronic applications.