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<p>In this study, the influence of magnesium molar concentration on the structural and optoelectronic properties of magnesium oxide (MgO) thin films was investigated. Synthesized via the Jet Nebulizer Spray Pyrolysis (JNSP) technique, films prepared with a precursor concentration of 0.4&#xa0;M exhibited superior qualities. Comprehensive characterization using XRD, UV–Vis, FESEM and EDX confirmed that this specific concentration achieved enhanced crystallinity, a desirable nanoflake-like morphology and reduced defect density. When the optimized film was integrated into a Cu/MgO/n-Si MOS Schottky Barrier Diode (SBD), the resulting device showed excellent performance. Key metrics included an ideality factor of 4.83, a barrier height of 0.72&#xa0;eV, a high photosensitivity of 87.51% and a responsivity of 45.31&#xa0;mA/W. The device’s impressive detectivity of 2.16 × 10<sup>9</sup>&#xa0;Jones demonstrates its strong potential for next-generation optoelectronic applications. These findings underscore the critical role of precursor concentration tuning in developing high-performance MOS-based devices for future photonic and photovoltaic technologies.</p>

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Optimizing MgO thin films via molar control for next-generation MOS-based Schottky barrier diode

  • 期刊论文

  • 发表日期：

    2025年10月31日

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  • G. Alan Sibu,
  • V. Balasubramani,
  • T. Akila,
  • M. A. Sayed,
  • S. AlFaify,
  • Mohd Shkir

摘要

In this study, the influence of magnesium molar concentration on the structural and optoelectronic properties of magnesium oxide (MgO) thin films was investigated. Synthesized via the Jet Nebulizer Spray Pyrolysis (JNSP) technique, films prepared with a precursor concentration of 0.4 M exhibited superior qualities. Comprehensive characterization using XRD, UV–Vis, FESEM and EDX confirmed that this specific concentration achieved enhanced crystallinity, a desirable nanoflake-like morphology and reduced defect density. When the optimized film was integrated into a Cu/MgO/n-Si MOS Schottky Barrier Diode (SBD), the resulting device showed excellent performance. Key metrics included an ideality factor of 4.83, a barrier height of 0.72 eV, a high photosensitivity of 87.51% and a responsivity of 45.31 mA/W. The device’s impressive detectivity of 2.16 × 109 Jones demonstrates its strong potential for next-generation optoelectronic applications. These findings underscore the critical role of precursor concentration tuning in developing high-performance MOS-based devices for future photonic and photovoltaic technologies.