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<p>Silicon-based solar cells account for more than 90% of the global photovoltaic (PV) market due to their abundant silicon resources, high process maturity and low cost. Diamond wire saw (DWS) is a multi-wire slicing method that uses saw wires with fixed diamond abrasives. As DWS is the primary method for producing silicon photovoltaic (PV) wafers, the resulting subsurface microcrack damage (SSD) is a critical factor limiting their mechanical reliability and photoelectric efficiency. This review comprehensively summarizes recent research on DWS-induced SSD in silicon. A synthesis of the literature reveals that reported SSD depths range from 1 to 30&#xa0;μm, influenced by measurement techniques and process parameters. And diamond wire sawing producing less SSD depth than loose abrasive wire sawing. Process parameters significantly affect SSD depth: increasing wire speed or decreasing feed speed reduces depth, while smaller abrasive size and worn saw wires produce shallower depth. The review also reveals a strong correlation between surface roughness and SSD depth, with rougher surfaces typically exhibiting deeper SSD. Finally, the review analyzes numerical modeling of SSD. These models quantitatively describe microcrack initiation and propagation during abrasive scratching on silicon, offering a microscopic view of how the damage is formed. This comprehensive review provides valuable references for researchers and contributes to the development of high-efficiency, low-cost photovoltaic technology.</p>

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Research progress on subsurface microcrack damage of silicon wafer cut by diamond wire saw: a review

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • Dameng Cheng,
  • Yufei Gao,
  • Chunfeng Yang

摘要

Silicon-based solar cells account for more than 90% of the global photovoltaic (PV) market due to their abundant silicon resources, high process maturity and low cost. Diamond wire saw (DWS) is a multi-wire slicing method that uses saw wires with fixed diamond abrasives. As DWS is the primary method for producing silicon photovoltaic (PV) wafers, the resulting subsurface microcrack damage (SSD) is a critical factor limiting their mechanical reliability and photoelectric efficiency. This review comprehensively summarizes recent research on DWS-induced SSD in silicon. A synthesis of the literature reveals that reported SSD depths range from 1 to 30 μm, influenced by measurement techniques and process parameters. And diamond wire sawing producing less SSD depth than loose abrasive wire sawing. Process parameters significantly affect SSD depth: increasing wire speed or decreasing feed speed reduces depth, while smaller abrasive size and worn saw wires produce shallower depth. The review also reveals a strong correlation between surface roughness and SSD depth, with rougher surfaces typically exhibiting deeper SSD. Finally, the review analyzes numerical modeling of SSD. These models quantitatively describe microcrack initiation and propagation during abrasive scratching on silicon, offering a microscopic view of how the damage is formed. This comprehensive review provides valuable references for researchers and contributes to the development of high-efficiency, low-cost photovoltaic technology.