Tailoring optical and microstructural characteristics of CsPbBr3 thin films through processing parameters
摘要
Inorganic cesium lead bromide (CsPbBr3) has emerged as a highly promising perovskite for light-emitting and other optoelectronic applications, owing to its suitable bandgap, strong luminescence, and superior environmental stability compared to organic–inorganic counterparts. However, the fabrication of high-quality thin films under ambient conditions remains a challenge due to limitations in phase purity, surface morphology, and defect-induced non-radiative recombination. In this study, a simple and cost-effective one-step spin-coating strategy was employed to fabricate CsPbBr3:polyethylene oxide (PEO) composite thin films on preheated glass substrates. By systematically adjusting the precursor stoichiometry (CsBr:PbBr2 molar ratio), annealing temperature, and CsPbBr3:PEO weight ratio, the structural, morphological, and optical characteristics of the films were optimized. X-ray diffraction confirmed the formation of polycrystalline CsPbBr3 along with secondary Cs4PbBr6 phases, with the relative content strongly influenced by PEO concentration and annealing conditions. The incorporation of PEO enhanced surface coverage, reduced grain size, and suppressed pinhole formation by modulating crystallization kinetics. The optimized PEO content (65 wt%) at 100 °C yielded dense films with approximately 99.6% surface coverage and a root-mean-square roughness of 15.7 nm. Photoluminescence (PL) and UV–Vis analyses revealed that PEO effectively passivated defects, suppressed non-radiative recombination, and significantly enhanced PL intensity without altering the bandgap (~ 2.3 eV). Overall, this study presents an ambient-compatible approach for producing high-quality, luminescent, and stable CsPbBr3:PEO composite thin films, highlighting the importance of polymer incorporation and process optimization in the advancement of perovskite-based optoelectronic devices.