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<p>In order to investigate the growth-induced defects, influence on Tin Sulphide (SnS) thin film properties, SnS thin films were synthesized via spray pyrolysis at two substrate temperatures 200&#xa0;°C and 400&#xa0;°C. The prepared films were characterized using X-ray diffraction, Raman spectroscopy, and UV–Vis spectroscopy. Additionally, the Space-Charge-Limited Current (SCLC) method was used to analyse the Au/SnS/Au sandwich structures. Current density–voltage (J-V) characteristics were measured and analysed to determine the density of states (DOS) near the Fermi level within the band gap of the prepared sandwich structures. The SCLC analysis revealed DOS values of 7.79 × 10<sup>15</sup>&#xa0;cm<sup>−3</sup>&#xa0;eV<sup>−1</sup> and 2.1 × 10<sup>15</sup>&#xa0;cm<sup>−3</sup>&#xa0;eV<sup>−1</sup>, respectively, for the 200&#xa0;°C and 400&#xa0;°C samples. Defect positions were located at 32&#xa0;meV and 24&#xa0;meV above the Fermi level. Furthermore, carrier mobility and concentration were extracted from the SCLC data, and these results were subsequently compared with Hall Effect measurements.</p>

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Transport characteristics and defect densities in Au/SnS/Au sandwich structure using space-charge-limited current (SCLC) technique

  • 期刊论文

  • 发表日期：

    2025年10月15日

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  • Meriem Messaoudi,
  • Lynda Beddek,
  • Samah Boudour,
  • Samia Satta,
  • Kenza Kamli,
  • Hamza Khemliche,
  • Walid Bedjaoui,
  • Idris Bouchama,
  • Messaouda Khammar,
  • Mohammed Salah Aida,
  • Nadir Attaf

摘要

In order to investigate the growth-induced defects, influence on Tin Sulphide (SnS) thin film properties, SnS thin films were synthesized via spray pyrolysis at two substrate temperatures 200 °C and 400 °C. The prepared films were characterized using X-ray diffraction, Raman spectroscopy, and UV–Vis spectroscopy. Additionally, the Space-Charge-Limited Current (SCLC) method was used to analyse the Au/SnS/Au sandwich structures. Current density–voltage (J-V) characteristics were measured and analysed to determine the density of states (DOS) near the Fermi level within the band gap of the prepared sandwich structures. The SCLC analysis revealed DOS values of 7.79 × 1015 cm−3 eV−1 and 2.1 × 1015 cm−3 eV−1, respectively, for the 200 °C and 400 °C samples. Defect positions were located at 32 meV and 24 meV above the Fermi level. Furthermore, carrier mobility and concentration were extracted from the SCLC data, and these results were subsequently compared with Hall Effect measurements.