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<p>This study reports a versatile solution-based approach for preparing a phosphorus precursor for silicon (Si) doping in solar cell fabrication. Phosphorus incorporation was achieved through the formation of phosphorus–silicate glass (PSG) films, followed by rapid thermal annealing. The processing parameters were systematically optimized by varying the phosphorus concentration in the precursor solution, as well as the annealing temperature and duration. An annealing temperature of 950&#xa0;°C and a dwell time of 3&#xa0;min were found to yield the most favorable doping characteristics. Sheet resistance mapping confirmed that the doped layers exhibited uniform sheet resistances in the range of 100–140&#xa0;Ω/sq. The influence of PSG film baking temperature on structural evolution and subsequent doping process was also examined, revealing its critical role in determining the quality of the doped layers. The results suggest that controlled precursor aging and thermal treatment enable reproducible phosphorus diffusion. Overall, the proposed method provides a simple and effective alternative to conventional doping techniques for Si photovoltaics.</p>

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Phosphorus doping solution development and impact of phosphorus-silicate glass structure on doping process during rapid thermal annealing

  • 期刊论文

  • 发表日期：

    2025年10月7日

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  • Aizhan Kusainova,
  • Assanali Sultanov,
  • Aiganym Suleimenova,
  • Amir Eshanov,
  • Kair Nussupov,
  • Nurzhan Beisenkhanov

摘要

This study reports a versatile solution-based approach for preparing a phosphorus precursor for silicon (Si) doping in solar cell fabrication. Phosphorus incorporation was achieved through the formation of phosphorus–silicate glass (PSG) films, followed by rapid thermal annealing. The processing parameters were systematically optimized by varying the phosphorus concentration in the precursor solution, as well as the annealing temperature and duration. An annealing temperature of 950 °C and a dwell time of 3 min were found to yield the most favorable doping characteristics. Sheet resistance mapping confirmed that the doped layers exhibited uniform sheet resistances in the range of 100–140 Ω/sq. The influence of PSG film baking temperature on structural evolution and subsequent doping process was also examined, revealing its critical role in determining the quality of the doped layers. The results suggest that controlled precursor aging and thermal treatment enable reproducible phosphorus diffusion. Overall, the proposed method provides a simple and effective alternative to conventional doping techniques for Si photovoltaics.