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<p>The indium arsenide (InAs) single-crystal substrate, a binary compound semiconductor, is highly susceptible to subsurface damage during surface processing due to its inherent mechanical properties (low hardness and brittleness) and physical characteristics (propensity for chemical bond breakage). Such damage often manifests as epitaxial defects, including severe lattice disruptions, degraded surface quality, and island-type growth patterns, which critically influence the optical/electrical performance and reliability of infrared detectors. In this study, we propose a novel non-destructive approach for qualitative subsurface damage characterization on InAs substrates using spectroscopic ellipsometry with a narrow wavelength scanning range (200–400&#xa0;nm). Furthermore, we demonstrate that under identical chemical mechanical polishing (CMP) conditions, alkaline-based solutions induce significantly less subsurface damage compared to acidic media. This work not only provides the industry with a practical qualitative comparisons subsurface damage detection methodology but also advances the mechanistic understanding of subsurface defect formation in InAs single crystals. The findings contribute directly to optimizing infrared detector fabrication processes and enhancing device performance.</p>

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Nanostructure analysis: subsurface damage in InAs single-crystal substrates via Urbach band tail absorption from spectroscopic ellipsometry

  • 期刊论文

  • 发表日期：

    2025年11月7日

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  • Lijie Liu,
  • Siming Chen,
  • Yuan Li,
  • Yuanda Wu,
  • Junming An

摘要

The indium arsenide (InAs) single-crystal substrate, a binary compound semiconductor, is highly susceptible to subsurface damage during surface processing due to its inherent mechanical properties (low hardness and brittleness) and physical characteristics (propensity for chemical bond breakage). Such damage often manifests as epitaxial defects, including severe lattice disruptions, degraded surface quality, and island-type growth patterns, which critically influence the optical/electrical performance and reliability of infrared detectors. In this study, we propose a novel non-destructive approach for qualitative subsurface damage characterization on InAs substrates using spectroscopic ellipsometry with a narrow wavelength scanning range (200–400 nm). Furthermore, we demonstrate that under identical chemical mechanical polishing (CMP) conditions, alkaline-based solutions induce significantly less subsurface damage compared to acidic media. This work not only provides the industry with a practical qualitative comparisons subsurface damage detection methodology but also advances the mechanistic understanding of subsurface defect formation in InAs single crystals. The findings contribute directly to optimizing infrared detector fabrication processes and enhancing device performance.