Scholarlink

<p>Antimony ethyl xanthate (<b>1</b>) and barium isopropyl xanthate (<b>2</b>) were synthesised and used as single-source precursors (SSPs) to prepare solution-processed Ba-doped Sb<sub>2</sub>S<sub>3</sub> films. Ternary Sb<sub>2-x</sub>Ba<sub>x</sub>S<sub>3</sub> films (0 ≤ x ≤ 100) mol% Ba and (BaS) film were synthesised by spin-coating the solution on glass substrates and annealing at 550&#xa0;°C for 1.5 h, and (Sb<sub>2</sub>S<sub>3</sub>) films were annealed at 250&#xa0;°C for 1 h. Compositional, structural, morphological, optical, and electrical properties were characterised by p-XRD, EDX, ICP, Raman spectroscopy, SEM, TEM, and resistivity measurements (ρ). (p-XRD) reveals that the (Sb<sub>2</sub>S<sub>3</sub>) film has an orthorhombic structure with a dominant (210) orientation. Ba incorporation induced a progressive phase transition; the (103) orientation was promoted at intermediate doping, and it was modified into a cubic (111) BaS phase at higher doping levels. SEM shows lamellar morphology at 50 mol% Ba. The existence of Sb, Ba, and S was verified using (EDX) and (ICP), confirming intact decomposition and phase purity, consistent with the X-ray diffraction (XRD) and Raman results. The optical bandgap (E<sub>g</sub>), estimated from Tauc plots, ranged from 1.7 eV (Sb<sub>2</sub>S<sub>3</sub>) to 3.85&#xa0;eV (BaS), indicating tunable optoelectronic properties. Resistivity increased with Ba content. (BaS) exhibited a raised resistivity (18.4&#xa0;Ω cm), showing reduced conductivity compared to (Sb<sub>2</sub>S<sub>3</sub>).</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Phase tuning and optoelectronic properties of solution-processed Ba-doped Sb2S3 chalcogenide thin films

  • 期刊论文

  • 发表日期：

    2025年9月25日

查看全文
  • Ali AK. Bakly,
  • Xiang Li Zhong,
  • Salih Abbas Habeeb

摘要

Antimony ethyl xanthate (1) and barium isopropyl xanthate (2) were synthesised and used as single-source precursors (SSPs) to prepare solution-processed Ba-doped Sb2S3 films. Ternary Sb2-xBaxS3 films (0 ≤ x ≤ 100) mol% Ba and (BaS) film were synthesised by spin-coating the solution on glass substrates and annealing at 550 °C for 1.5 h, and (Sb2S3) films were annealed at 250 °C for 1 h. Compositional, structural, morphological, optical, and electrical properties were characterised by p-XRD, EDX, ICP, Raman spectroscopy, SEM, TEM, and resistivity measurements (ρ). (p-XRD) reveals that the (Sb2S3) film has an orthorhombic structure with a dominant (210) orientation. Ba incorporation induced a progressive phase transition; the (103) orientation was promoted at intermediate doping, and it was modified into a cubic (111) BaS phase at higher doping levels. SEM shows lamellar morphology at 50 mol% Ba. The existence of Sb, Ba, and S was verified using (EDX) and (ICP), confirming intact decomposition and phase purity, consistent with the X-ray diffraction (XRD) and Raman results. The optical bandgap (Eg), estimated from Tauc plots, ranged from 1.7 eV (Sb2S3) to 3.85 eV (BaS), indicating tunable optoelectronic properties. Resistivity increased with Ba content. (BaS) exhibited a raised resistivity (18.4 Ω cm), showing reduced conductivity compared to (Sb2S3).