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<p>W/Mg co-doped VO<sub>2</sub> thin films were prepared by co-sputtering of magnesium, tungsten, and vanadium (V(99%)W(1%) alloy targets at a substrate temperature of 425&#xa0;°C. The films were characterized by X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, the two-point probe, and UV/VIS/NIR Spectrometer. W/Mg co-doped VO<sub>2</sub> films with concentrations of~0.95 at.% and~3.1 at.% for W and Mg, respectively, showed relatively lower crystallite sizes and reduced hysteresis loop widths of 3.9&#xa0;nm and~2&#xa0;°C compared to 11.4&#xa0;nm and 17.8&#xa0;°C, respectively, for pristine VO<sub>2</sub>. The integrated luminous transmittance of the co-doped samples was~47%, compared to 26% and 41% for the W-doped and pristine VO<sub>2</sub> films, respectively. A significant reduction in transition temperature to below 33&#xa0;°C was realized for the co-doped films, compared to 64.8&#xa0;°C and 44&#xa0;°C for the undoped and W-doped VO<sub>2</sub>-based thin films, respectively. This work shows that a controlled amount of Mg in the W-doped VO<sub>2</sub> films could potentially make VO<sub>2</sub> thin films useful for smart window applications.</p>

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W/Mg co-doped VO2 thin films with improved transition temperature, optical, and structural properties

  • 期刊论文

  • 发表日期：

    2025年10月3日

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  • H. F. Haji,
  • M. E. Samiji,
  • N. R. Mlyuka

摘要

W/Mg co-doped VO2 thin films were prepared by co-sputtering of magnesium, tungsten, and vanadium (V(99%)W(1%) alloy targets at a substrate temperature of 425 °C. The films were characterized by X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, the two-point probe, and UV/VIS/NIR Spectrometer. W/Mg co-doped VO2 films with concentrations of~0.95 at.% and~3.1 at.% for W and Mg, respectively, showed relatively lower crystallite sizes and reduced hysteresis loop widths of 3.9 nm and~2 °C compared to 11.4 nm and 17.8 °C, respectively, for pristine VO2. The integrated luminous transmittance of the co-doped samples was~47%, compared to 26% and 41% for the W-doped and pristine VO2 films, respectively. A significant reduction in transition temperature to below 33 °C was realized for the co-doped films, compared to 64.8 °C and 44 °C for the undoped and W-doped VO2-based thin films, respectively. This work shows that a controlled amount of Mg in the W-doped VO2 films could potentially make VO2 thin films useful for smart window applications.