<p>Substitution of metal ions at the B-site of lead halide perovskites has emerged as a promising approach to minimize lead toxicity and enhance their optoelectronic properties. The concentration of metal dopants plays a crucial role in modulating the electrical and optical characteristics of these perovskites. This study employs a chemical synthesis method to synthesize both pristine and Sn²⁺ doped CsPbBr₃ perovskites under ambient conditions, with dopant concentrations varying from 1 to 13&#xa0;mol%. A comprehensive analysis was conducted to evaluate the structural, optical, and electrical properties of the synthesized perovskites. This study aims to determine the optimal doping concentration and assess improvements in optoelectronic properties of perovskites for applications in LEDs and photovoltaic devices. The origin of lattice shrinkage and octahedral distortion in Sn²⁺ doped CsPbBr₃ is thoroughly analyzed and elucidated. The obtained results revealed that Sn²⁺ doping in CsPbBr₃ significantly enhances photoluminescence intensity, yields a green color with high color purity and improves charge carrier mobility (up to 88.7 cm²/V-s) with reduction of the optical bandgap.</p>