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<p>In this work, the photoresponse of InAs/InP core/shell nanowire transistor was investigated with different InP shell thickness and gate voltage. In comparison with bare InAs NWs, about 300 fold improvement on the photosensitivity was realized with InP shell thickness of 3.3&#xa0;nm. For the InAs/InP core/shell nanowires, an abnormal increase of resistance under illumination was observed, which can be related to the trapping of photo excited electrons at the interface. Moreover, the photosensitivity and response speed can be simultaneously enhanced with introducing InP shell and became saturated with InP shell thicker than 3.3&#xa0;nm. The photoresponse was explained via p/n-type transport behavior, radial build-in electric field as well as trapping of the electrons at InAs/InP interface.</p>

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Effects of shell thickness and gate voltage on the photoresponse of InAs/InP core/shell nanowires

  • 期刊论文

  • 发表日期：

    2025年9月22日

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  • Min Bai,
  • Zhe Liu,
  • Hui Huang,
  • Shufeng Xia

摘要

In this work, the photoresponse of InAs/InP core/shell nanowire transistor was investigated with different InP shell thickness and gate voltage. In comparison with bare InAs NWs, about 300 fold improvement on the photosensitivity was realized with InP shell thickness of 3.3 nm. For the InAs/InP core/shell nanowires, an abnormal increase of resistance under illumination was observed, which can be related to the trapping of photo excited electrons at the interface. Moreover, the photosensitivity and response speed can be simultaneously enhanced with introducing InP shell and became saturated with InP shell thicker than 3.3 nm. The photoresponse was explained via p/n-type transport behavior, radial build-in electric field as well as trapping of the electrons at InAs/InP interface.