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<p>High-temperature piezoelectric materials are of great importance for sensing and actuation applications in extreme environments. In this study, Ce<sup>3+</sup>/Ce<sup>4+</sup>-doped Bi<sub>4-<i>x</i></sub>Ce<sub><i>x</i></sub>Ti<sub>2.94</sub>Mo<sub>0.02</sub>Nb<sub>0.04</sub>O<sub>12</sub> (BCTMN-100<i>x</i>Ce) layered ferroelectric ceramics are designed and fabricated to systematically investigate their microstructure, piezoelectric properties, and high-temperature stability. The results demonstrate that the BCTMN-4Ce ceramic exhibits optimal comprehensive performance, with a piezoelectric coefficient (<i>d</i><sub>33</sub>) of 32.4 pC/N, a Curie temperature (<i>T</i><sub>C</sub>) exceeding 670&#xa0;°C, and high resistivity (&gt; 10<sup>6</sup> Ω·cm) at 500&#xa0;°C. Microstructural analysis reveals that Ce doping effectively modulates oxygen vacancy concentration and optimizes domain structure, thereby significantly enhancing the piezoelectric response and high-temperature stability. This work provides a new research strategy for developing high-performance high-temperature piezoelectric materials, and the BCTMN-4Ce ceramic shows promising potential for applications in high-temperature piezoelectric devices.</p>

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Effects of Ce doping on the structure and electrical properties of Bi4Ti3O12-based piezoelectric ceramics

  • 期刊论文

  • 发表日期：

    2025年9月11日

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  • Shize Zhao,
  • Yue Pan,
  • Meilin Cao,
  • Yiyan Zhou,
  • Zihao Zhu,
  • Xiuli Chen,
  • Xu Li,
  • Huanfu Zhou

摘要

High-temperature piezoelectric materials are of great importance for sensing and actuation applications in extreme environments. In this study, Ce3+/Ce4+-doped Bi4-xCexTi2.94Mo0.02Nb0.04O12 (BCTMN-100xCe) layered ferroelectric ceramics are designed and fabricated to systematically investigate their microstructure, piezoelectric properties, and high-temperature stability. The results demonstrate that the BCTMN-4Ce ceramic exhibits optimal comprehensive performance, with a piezoelectric coefficient (d33) of 32.4 pC/N, a Curie temperature (TC) exceeding 670 °C, and high resistivity (> 106 Ω·cm) at 500 °C. Microstructural analysis reveals that Ce doping effectively modulates oxygen vacancy concentration and optimizes domain structure, thereby significantly enhancing the piezoelectric response and high-temperature stability. This work provides a new research strategy for developing high-performance high-temperature piezoelectric materials, and the BCTMN-4Ce ceramic shows promising potential for applications in high-temperature piezoelectric devices.