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<p>Gamma irradiation is a cost-effective technique for modifying the structure–property relationships in chalcogenide systems, making them suitable for emerging functional applications. This study investigates the influence of gamma irradiation on the structural, optical, electrical, electronic, and photoelectrical properties of thermally evaporated Ag₁₀Sb₂₀Se₇₀ thin films. X-ray diffraction (XRD) patterns reveal the emergence of the selenium (310) phase upon irradiation, indicating enhanced crystallinity at higher doses. Raman spectra show the gradual disappearance of peaks at 160, 189, and 253&#xa0;cm⁻<sup>1</sup> with increasing gamma dose, suggesting the formation of defect states. The optical bandgap decreases from 1.28&#xa0;eV to 1.04&#xa0;eV due to phase transitions and defect generation. The DC activation energy also decreases from 0.25 to 0.20&#xa0;eV, with the pre-exponential factor pointing toward conduction via localized states. A maximum photosensitivity value of 23.6 for the S3 sample correlates well with the minimum values of stretched exponential fit parameters derived from photocurrent decay. Structural changes induced by gamma irradiation are further analyzed using density functional theory (DFT), providing insight into electronic properties such as the molecular energy spectrum, density of states, and the HOMO–LUMO energy gap. Theoretical findings strongly support the observed variations in photosensitivity and other physical characteristics, highlighting the potential of gamma-irradiated Ag₁₀Sb₂₀Se₇₀ thin films for advanced functional applications.</p>

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Experimental and theoretical investigations for gamma-irradiation effects in se-rich Ag10Sb20Se70 thin films

  • 期刊论文

  • 发表日期：

    2025年9月9日

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  • Rita Sharma,
  • Shaveta Sharma,
  • Praveen Kumar Sharma,
  • Rengasamy Thangaraj,
  • Sukhbir Singh,
  • Jatinder Kumar Goswamy

摘要

Gamma irradiation is a cost-effective technique for modifying the structure–property relationships in chalcogenide systems, making them suitable for emerging functional applications. This study investigates the influence of gamma irradiation on the structural, optical, electrical, electronic, and photoelectrical properties of thermally evaporated Ag₁₀Sb₂₀Se₇₀ thin films. X-ray diffraction (XRD) patterns reveal the emergence of the selenium (310) phase upon irradiation, indicating enhanced crystallinity at higher doses. Raman spectra show the gradual disappearance of peaks at 160, 189, and 253 cm⁻1 with increasing gamma dose, suggesting the formation of defect states. The optical bandgap decreases from 1.28 eV to 1.04 eV due to phase transitions and defect generation. The DC activation energy also decreases from 0.25 to 0.20 eV, with the pre-exponential factor pointing toward conduction via localized states. A maximum photosensitivity value of 23.6 for the S3 sample correlates well with the minimum values of stretched exponential fit parameters derived from photocurrent decay. Structural changes induced by gamma irradiation are further analyzed using density functional theory (DFT), providing insight into electronic properties such as the molecular energy spectrum, density of states, and the HOMO–LUMO energy gap. Theoretical findings strongly support the observed variations in photosensitivity and other physical characteristics, highlighting the potential of gamma-irradiated Ag₁₀Sb₂₀Se₇₀ thin films for advanced functional applications.