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<p>Ternary alloy system PbNi<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>-PbZrO<sub>3</sub>-PbTiO<sub>3</sub> possesses an extraordinary piezoelectric coefficient ~ 1000 pC/N at room temperature with dielectric anomaly (T<sub>m</sub>) ~ 100 ºC. We have systematically investigated the dependence of the piezoelectric and dielectric properties of this system on different sintering environments. For a particular sintering condition, this system shows both high <i>d</i><sub><i>33</i></sub> ~ 700 pC/N and <i>d</i><sub><i>33</i></sub>* ~ 2600&#xa0;pm/V. We have found that the pseudocubic region in the PbNi<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>-PbZrO<sub>3</sub>-PbTiO<sub>3</sub> phase diagram consists of a monoclinic-tetragonal morphotropic phase boundary (MPB). We employed impedance spectroscopy to explore a possible correlation between defects density and the large value of the piezoelectric constant. Materials exhibiting high d<sub>33</sub> at room temperature show lower impedance at high temperature and lower activation energy ~ 0.70&#xa0;eV for charge migration.</p>

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On the origin of high piezoelectric response in PbNi1/3Nb2/3O3-PbZrO3-PbTiO3 ternary system

  • 期刊论文

  • 发表日期：

    2025年9月8日

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  • Hariom Prakash,
  • Naveen Kumar,
  • Abhipshit Kumar,
  • Ram Prakash Singh,
  • Bhoopesh Mahale,
  • A. Anil,
  • Sujoy Saha

摘要

Ternary alloy system PbNi1/3Nb2/3O3-PbZrO3-PbTiO3 possesses an extraordinary piezoelectric coefficient ~ 1000 pC/N at room temperature with dielectric anomaly (Tm) ~ 100 ºC. We have systematically investigated the dependence of the piezoelectric and dielectric properties of this system on different sintering environments. For a particular sintering condition, this system shows both high d33 ~ 700 pC/N and d33* ~ 2600 pm/V. We have found that the pseudocubic region in the PbNi1/3Nb2/3O3-PbZrO3-PbTiO3 phase diagram consists of a monoclinic-tetragonal morphotropic phase boundary (MPB). We employed impedance spectroscopy to explore a possible correlation between defects density and the large value of the piezoelectric constant. Materials exhibiting high d33 at room temperature show lower impedance at high temperature and lower activation energy ~ 0.70 eV for charge migration.