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<p>Perovskite Solar Cells (PSC) are a promising photovoltaic technology due to their high Power Conversion Efficiencies (PCE), tunable optoelectronic properties, and cost-effective fabrication. Despite rapid progress in their development, commercialization is hindered by environmental instability, including degradation under moisture, heat, and prolonged illumination. This study investigates the integration of Graphene Oxide (GO) as a defect passivation and moisture-resistant material to address these challenges in Methylammonium Lead Iodide (MAPbI<sub>3</sub>)-based PSC. The treated devices achieved a peak PCE of 24 and an 8% improvement in Fill Factor (FF) compared to untreated devices, showcasing enhanced charge transport and reduced recombination losses. Stability tests under continuous illumination demonstrated that GO-treated devices retained over 50% of their initial PCE after 1000&#xa0;h, while untreated devices exhibited near-complete degradation. Moreover, under 100% humidity conditions, treated devices maintained over 98% of their initial PCE, while untreated devices degraded below 95%. These findings highlight the dual functionality of GO as a defect passivator and environmental barrier, significantly improving both the operational efficiency and long-term durability of PSCs. The results provide a pathway for scalable and reliable PSC technologies that contribute to the advancement of next-generation photovoltaics.</p>

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Graphene oxide-enhanced inverted MAPbI3 perovskite solar cells: improvements in efficiency and long-term stability

  • 期刊论文

  • 发表日期：

    2025年9月7日

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  • Ehsan H. Sabbar,
  • Masoud Shabaninezhad,
  • Hasnaa Imad Al-Shaikhli

摘要

Perovskite Solar Cells (PSC) are a promising photovoltaic technology due to their high Power Conversion Efficiencies (PCE), tunable optoelectronic properties, and cost-effective fabrication. Despite rapid progress in their development, commercialization is hindered by environmental instability, including degradation under moisture, heat, and prolonged illumination. This study investigates the integration of Graphene Oxide (GO) as a defect passivation and moisture-resistant material to address these challenges in Methylammonium Lead Iodide (MAPbI3)-based PSC. The treated devices achieved a peak PCE of 24 and an 8% improvement in Fill Factor (FF) compared to untreated devices, showcasing enhanced charge transport and reduced recombination losses. Stability tests under continuous illumination demonstrated that GO-treated devices retained over 50% of their initial PCE after 1000 h, while untreated devices exhibited near-complete degradation. Moreover, under 100% humidity conditions, treated devices maintained over 98% of their initial PCE, while untreated devices degraded below 95%. These findings highlight the dual functionality of GO as a defect passivator and environmental barrier, significantly improving both the operational efficiency and long-term durability of PSCs. The results provide a pathway for scalable and reliable PSC technologies that contribute to the advancement of next-generation photovoltaics.