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<p>In this study, flexible thin films of pure zinc tungstate (ZnWO₄) and ZnWO₄ doped with Ce, Ga, Y, and Ni (ZnWO₄:Ce, ZnWO₄:Ga, ZnWO₄:Y, and ZnWO₄:Ni) were successfully fabricated and investigated for their photoluminescence and scintillation properties. Structural and optical investigations validated effective doping and superior crystalline quality. Photoluminescence spectroscopy demonstrated a significant increase in intensity due to doping: the undoped ZnWO₄ thin film displayed a PL intensity of 27,600, but Ga-doped films exhibited a striking rise to 1,200,000, along with a blue shift in the emission wavelength range (355–460&#xa0;nm for ZnWO₄:Ga thin films). Scintillation tests under <sup>241</sup>Am α-particle irradiation demonstrated that the net counting rate for ZnWO₄:Ga TF (2080 CPS) markedly exceeded all other doped and undoped samples, as well as the standard ZnS (Ag) reference. FTIR spectra confirmed the formation of W–O bonds and the presence of surface groups of PVA matrix such as OH and CO₃<sup>2</sup>⁻. UV–Vis spectroscopy and Kubelka–Munk analysis revealed enhanced visible light absorption and a reduced bandgap (as low as 3.07&#xa0;eV) in Ni-doped samples. These findings highlight the significant impact of Ga doping in enhancing the luminous and scintillation efficacy of flexible ZnWO₄ films, indicating their considerable promise for sophisticated optoelectronic applications.</p>

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Luminescent properties of Ce, Ga, Y, and Ni‐Doped ZnWO₄ hybrid thin films for high-performance optical applications

  • 期刊论文

  • 发表日期：

    2025年8月22日

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  • Sadegh Azadmehr,
  • Sanaz Alamdari,
  • Zinab Salimi,
  • Majid Jafar Tafreshi

摘要

In this study, flexible thin films of pure zinc tungstate (ZnWO₄) and ZnWO₄ doped with Ce, Ga, Y, and Ni (ZnWO₄:Ce, ZnWO₄:Ga, ZnWO₄:Y, and ZnWO₄:Ni) were successfully fabricated and investigated for their photoluminescence and scintillation properties. Structural and optical investigations validated effective doping and superior crystalline quality. Photoluminescence spectroscopy demonstrated a significant increase in intensity due to doping: the undoped ZnWO₄ thin film displayed a PL intensity of 27,600, but Ga-doped films exhibited a striking rise to 1,200,000, along with a blue shift in the emission wavelength range (355–460 nm for ZnWO₄:Ga thin films). Scintillation tests under 241Am α-particle irradiation demonstrated that the net counting rate for ZnWO₄:Ga TF (2080 CPS) markedly exceeded all other doped and undoped samples, as well as the standard ZnS (Ag) reference. FTIR spectra confirmed the formation of W–O bonds and the presence of surface groups of PVA matrix such as OH and CO₃2⁻. UV–Vis spectroscopy and Kubelka–Munk analysis revealed enhanced visible light absorption and a reduced bandgap (as low as 3.07 eV) in Ni-doped samples. These findings highlight the significant impact of Ga doping in enhancing the luminous and scintillation efficacy of flexible ZnWO₄ films, indicating their considerable promise for sophisticated optoelectronic applications.