Design of high-performance ML-graphene-based next-generation optoelectronic devices on paper
摘要
The scientific world is actively conducting different, innovative studies to fully reveal graphene's current potential, increase its use in technology, and create new device designs. Among the studies carried out, the design of different substrates that can be integrated into the flexible structure of graphene is of critical importance. In this study, we are developing a new optoelectronic device design on a paper surface that utilizes graphene, a reconfigurable material, as the active surface. Multilayer graphene samples were grown at different temperatures (900, 950, 1000, 1050 ℃) by the chemical vapor deposition method. We used the co-planar device structure, which is relatively easy and cheap to design, on the multilayer graphene surface that we transferred to paper. We have designed a flexible device with high optical contrast (from 3 V) and very fast, rapid switching times (3 s/0.8 s). In addition, the analyses performed using Raman spectroscopy, it was observed that the G band of graphene, seen at 1577 cm−1, a blue shift after the intercalation process. During the electrical measurements of the device, it was observed that the sheet resistance decreased significantly from 56 Ω/sq to 3.9 Ω/sq as the applied bias voltage increased. İn addition, it was concluded that the discharging current exceeded the charging current. We have realized a new optoelectronic device design that provides high optical contrast in the visible spectrum by modulating the electrical and optical properties of graphene through electrostatic doping.