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<p>This work investigates the influence of the reactive gas pulsing process (RGPP) on the structural, electrical, and device-level performance of SnO<sub>x</sub> thin-film transistors (TFTs). Both n-type and p-type SnO<sub>x</sub> films were fabricated using DC sputtering under varied oxygen pulsing durations (8 s, 12 s, and 20 s). Structural and morphological properties were analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM), while Hall effect measurements were employed to extract electrical parameters including resistivity, carrier mobility, and concentration. The RGPP enabled modulation of the oxygen stoichiometry and consequently the conductivity type and electrical behavior of the films. These experimentally extracted parameters were used as input data for numerical TCAD simulations of SnO<sub>x</sub>-based TFTs using Silvaco simulator tool. The simulations confirmed that optimal RGPP conditions (12 s) lead to enhanced electrical performance, including a high ON current and a low OFF current, yielding an ON/OFF current ratio of  ~ 176 dB. Band alignment diagrams further support the observed electronic conduction behavior as a function of pulse duration. These findings highlight the potential of RGPP for tuning SnO<sub>x</sub> properties, paving the way for its application in flexible and cost-effective electronic systems.</p>

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Performance analysis of SnOx thin-film transistor including gas pulsing effects: experimental and numerical modeling study

  • 期刊论文

  • 发表日期：

    2025年8月13日

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  • F. Djeffal,
  • H. Ferhati,
  • L. B. Drissi,
  • N. Martin

摘要

This work investigates the influence of the reactive gas pulsing process (RGPP) on the structural, electrical, and device-level performance of SnOx thin-film transistors (TFTs). Both n-type and p-type SnOx films were fabricated using DC sputtering under varied oxygen pulsing durations (8 s, 12 s, and 20 s). Structural and morphological properties were analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM), while Hall effect measurements were employed to extract electrical parameters including resistivity, carrier mobility, and concentration. The RGPP enabled modulation of the oxygen stoichiometry and consequently the conductivity type and electrical behavior of the films. These experimentally extracted parameters were used as input data for numerical TCAD simulations of SnOx-based TFTs using Silvaco simulator tool. The simulations confirmed that optimal RGPP conditions (12 s) lead to enhanced electrical performance, including a high ON current and a low OFF current, yielding an ON/OFF current ratio of  ~ 176 dB. Band alignment diagrams further support the observed electronic conduction behavior as a function of pulse duration. These findings highlight the potential of RGPP for tuning SnOx properties, paving the way for its application in flexible and cost-effective electronic systems.