Scholarlink

<p>In this study, In<sub>2</sub>O<sub>3</sub>–SnO<sub>2</sub>–ZnO (ITZO) thin films were fabricated via magnetron sputtering, and the effects of annealing temperature on the microstructure, surface morphology, and defect evolution (e.g., oxygen vacancy density, deep-level trap states) of the films were systematically investigated. The electrical properties of ITZO-based thin-film transistors (TFTs) were characterized using a semiconductor parameter analyzer. The results revealed that the ITZO films exhibited an amorphous structure, with surface smoothness improving as the annealing temperature increased. At an optimal annealing temperature of 300&#xa0;°C, the ITZO films demonstrated reduced oxygen vacancy-related defects and lower carrier concentration. This defect suppression not only enhanced the TFTs' on/off ratio but also mitigated carrier scattering, leading to superior device performance. The optimized ITZO TFTs achieved a high field-effect mobility of 22.5 cm<sup>2</sup>/V·s, an on/off ratio of 8.75 × 10⁷, and a subthreshold swing as low as 0.247&#xa0;V/dec.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High-performance ITZO thin-film transistors deposited by magnetron sputtering

  • 期刊论文

  • 发表日期：

    2025年8月15日

查看全文
  • Zhe Liu,
  • Xuewen Chen,
  • Libing Qian,
  • Quankun Zhang,
  • Kai Xiong,
  • Gaoyang Li,
  • Zhiyuan Chen,
  • Chunqing He

摘要

In this study, In2O3–SnO2–ZnO (ITZO) thin films were fabricated via magnetron sputtering, and the effects of annealing temperature on the microstructure, surface morphology, and defect evolution (e.g., oxygen vacancy density, deep-level trap states) of the films were systematically investigated. The electrical properties of ITZO-based thin-film transistors (TFTs) were characterized using a semiconductor parameter analyzer. The results revealed that the ITZO films exhibited an amorphous structure, with surface smoothness improving as the annealing temperature increased. At an optimal annealing temperature of 300 °C, the ITZO films demonstrated reduced oxygen vacancy-related defects and lower carrier concentration. This defect suppression not only enhanced the TFTs' on/off ratio but also mitigated carrier scattering, leading to superior device performance. The optimized ITZO TFTs achieved a high field-effect mobility of 22.5 cm2/V·s, an on/off ratio of 8.75 × 10⁷, and a subthreshold swing as low as 0.247 V/dec.