Enhanced microwave dielectric properties of Co1.1Zn0.9-xBaxTiO4 ceramics via Ba2+ ion substitution
摘要
This study modified the Co1.1Zn0.9TiO4 ceramic system through Ba2⁺ ion doping to enhance the quality factor (Q×f) and adjust the τf value. Ceramic samples were prepared via the solid-state reaction method at sintering temperatures of 1125–1200°C. XRD revealed that at low Ba doping concentrations (x = 0–0.01), Ba2⁺ could partially substitute Zn2⁺, maintaining the cubic spinel main phase (Co2TiO4) structure; when x ≥ 0.02, the larger ionic radius of Ba2⁺ induced phase separation and the formation of a secondary BaTiO3 phase, with the secondary-phase peak intensity increasing with doping concentration. The coexistence of main and secondary phases in the Co1.1Zn0.87Ba0.03TiO4 ceramic was confirmed by Rietveld refinement. SEM demonstrated that appropriate Ba doping (x = 0.01–0.03) promoted grain growth, while excessive Ba doping (x = 0.04) led to microstructural deterioration. The Q×f value of the Co1.1Zn0.87Ba0.03TiO4 ceramic increased to 66,943.2 GHz, while the τf value was adjusted to −17.13 ppm/°C, effectively reducing dielectric loss and enhancing temperature stability.